NGB8202N ON Semiconductor, NGB8202N Datasheet

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NGB8202N

Manufacturer Part Number
NGB8202N
Description
Ignition Igbt
Manufacturer
ON Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NGB8202NT4G
Manufacturer:
ON Semiconductor
Quantity:
18
Part Number:
NGB8202NT4G
Manufacturer:
ON
Quantity:
12 500
NGB8202N
Ignition IGBT
20 A, 400 V, N−Channel D
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 5
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ T
Continuous Gate Current
Transient Gate Current (t≤2 ms, f≤100 Hz)
ESD (Charged−Device Model)
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD (Machine Model) R = 0 W, C = 200 pF
Total Power Dissipation @ T
Derate above 25°C
Operating & Storage Temperature Range
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
Stress Applied to Load
Microprocessor Devices
Ideal for Coil−on−Plug and Driver−on−Coil Applications
Gate−Emitter ESD Protection
Temperature Compensated Gate−Collector Voltage Clamp Limits
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (R
Pb−Free Package is Available
Ignition Systems
C
= 25°C − Pulsed
Rating
(T
J
= 25°C unless otherwise noted)
C
= 25°C
G
) and Gate−Emitter Resistor (R
Symbol
T
2
V
V
ESD
ESD
ESD
J
V
PAK
P
, T
CES
CER
I
I
I
GE
C
G
G
D
stg
−55 to +175
Value
"15
440
440
500
150
1.0
2.0
8.0
1.0
20
50
20
1
GE
W/°C
)
Unit
A
A
mA
mA
kV
kV
°C
W
V
V
V
V
DC
AC
†For information on tape and reel specifications,
NGB8202NT4
NGB8202NT4G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
Device
G
20 AMPS, 400 VOLTS
I
GB8202N = Device Code
A
Y
WW
G
ORDERING INFORMATION
C
V
= 10 A, V
MARKING DIAGRAM
Gate
CE(on)
http://onsemi.com
1
R
R
(Pb−Free)
GE
Package
G
GB
8202NG
AYWW
Collector
Collector
D
D
= Assembly Location
= Year
= Work Week
= Pb−Free Package
2
2
PAK
PAK
= 1.3 V @
2
4
Publication Order Number:
GE
CASE 418B
STYLE 4
D
. 4.5 V
3
Emitter
2
800/Tape & Reel
800/Tape & Reel
PAK
C
Shipping
E
NGB8202N/D

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NGB8202N Summary of contents

Page 1

... MARKING DIAGRAM 4 Collector GB 8202NG AYWW 1 3 Gate Emitter 2 Collector GB8202N = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping 2 D PAK 800/Tape & Reel 2 D PAK 800/Tape & Reel (Pb−Free) Publication Order Number: NGB8202N/D † ...

Page 2

UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS Single Pulse Collector−to−Emitter Avalanche Energy ...

Page 3

ELECTRICAL CHARACTERISTICS Characteristic ON CHARACTERISTICS (Note 4) Collector−to−Emitter On−Voltage Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS Turn−Off Delay Time (Resistive) Fall Time (Resistive) Turn−Off Delay Time (Inductive) Fall Time (Inductive) Turn−On Delay Time Rise Time ...

Page 4

TYPICAL ELECTRICAL CHARACTERISTICS 400 350 T = 25°C J 300 250 T = 175°C J 200 150 100 INDUCTOR (mH) Figure 1. Self Clamped Inductive Switching 2.0 1.75 1.5 1.25 1.0 0.75 0.5 0.25 ...

Page 5

TYPICAL ELECTRICAL CHARACTERISTICS 25° 175° 0.5 1 1 GATE TO EMITTER VOLTAGE (V) GE ...

Page 6

Duty Cycle = 0.5 0.2 0.1 10 0.05 1 0.02 0.01 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 Figure 13. Minimum Pad Transient Thermal Resistance (Non−normalized Junction−to−Ambient) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single ...

Page 7

... N 0.197 REF 5.00 REF P 0.079 REF 2.00 REF R 0.039 REF 0.99 REF S 0.575 0.625 14.60 V 0.045 0.055 1.14 STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1.016 5.08 0.04 0.20 3.05 0.12 mm SCALE 3:1 inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NGB8202N/D MAX 9.65 10.29 4.83 0.89 1.40 8.89 2.79 0.64 2.79 1.83 8.13 15.88 1.40 ...

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