NGB8204N ON Semiconductor, NGB8204N Datasheet

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NGB8204N

Manufacturer Part Number
NGB8204N
Description
Ignition Igbt 18 Amps, 400 Volts
Manufacturer
ON Semiconductor
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
NGB8204NT4
Manufacturer:
ON
Quantity:
12 500
Part Number:
NGB8204NT4G
Manufacturer:
ON
Quantity:
12 500
Part Number:
NGB8204NT4G
Manufacturer:
ON/安森美
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NGB8204N
Ignition IGBT
18 Amps, 400 Volts
N−Channel D
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 3
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ T
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD (Machine Model) R = 0 W, C = 200 pF
Total Power Dissipation @ T
Derate above 25°C
Operating and Storage Temperature Range
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
Stress Applied to Load
Per Area
Microprocessor Devices
Ideal for Coil−on−Plug Applications
Gate−Emitter ESD Protection
Temperature Compensated Gate−Collector Voltage Clamp Limits
Integrated ESD Diode Protection
New Design Increases Unclamped Inductive Switching (UIS) Energy
Low Threshold Voltage to Interface Power Loads to Logic or
Low Saturation Voltage
High Pulsed Current Capability
Integrated Gate−Emitter Resistor (R
Emitter Ballasting for Short−Circuit Capability
Pb−Free Package is Available
C
= 25°C − Pulsed
Rating
2
(T
PAK
J
= 25°C unless otherwise noted)
C
= 25°C
GE
)
Symbol
T
V
V
ESD
ESD
J
V
P
, T
CES
CER
I
GE
C
D
stg
−55 to
Value
+175
0.77
430
430
800
115
8.0
18
18
50
1
W/°C
Unit
V
V
V
A
A
kV
°C
W
V
DC
DC
DC
DC
AC
†For information on tape and reel specifications,
NGB8204NT4
NGB8204NT4G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
G
Device
1
18 AMPS, 400 VOLTS
I
GB8204N = Device Code
A
Y
WW
G
ORDERING INFORMATION
C
V
= 10 A, V
MARKING DIAGRAM
Gate
CE(on)
http://onsemi.com
R
1
GE
(Pb−Free)
Package
D
GB
8204NG
AYWW
D
Collector
Collector
= Assembly Location
= Year
= Work Week
= Pb−Free Package
2
2
PAK
PAK
3 2.0 V @
2
4
Publication Order Number:
GE
CASE 418B
STYLE 4
D
. 4.5 V
3
Emitter
2
800 / Tape & Reel
800 / Tape & Reel
PAK
C
E
Shipping
NGB8204N/D

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NGB8204N Summary of contents

Page 1

... Shipping 2 NGB8204NT4 D PAK 800 / Tape & Reel 2 NGB8204NT4G D PAK 800 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NGB8204N/D † ...

Page 2

UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS Characteristic Single Pulse Collector−to−Emitter Avalanche Energy 5 21 1.8 mH, Starting 5.0 V, ...

Page 3

ELECTRICAL CHARACTERISTICS Characteristic ON CHARACTERISTICS (Note 3) Collector−to−Emitter On−Voltage Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS Turn−Off Delay Time (Resistive) Fall Time (Resistive) Turn−On Delay Time Rise Time *Maximum Value of Characteristic across Temperature Range. ...

Page 4

TYPICAL ELECTRICAL CHARACTERISTICS 25° COLLECTOR TO EMITTER VOLTAGE (V) CE Figure 1. Output Characteristics ...

Page 5

1 0 GATE TO EMITTER VOLTAGE (V) Figure 7. Collector−to−Emitter Voltage versus Gate−to−Emitter Voltage 2 ...

Page 6

100 ms 0.1 0. COLLECTOR−EMITTER VOLTAGE (V) Figure 13. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at T 100 ms 0.05 1 ...

Page 7

V BATT Figure 17. Circuit Configuration for Short Circuit Test #1 100 Duty Cycle = 0.5 0.2 0.1 10 0.05 0.02 0.01 ...

Page 8

... M 0.280 0.320 7.11 8.13 N 0.197 REF 5.00 REF P 0.079 REF 2.00 REF R 0.039 REF 0.99 REF S 0.575 0.625 14.60 15.88 V 0.045 0.055 1.14 1.40 STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 5.08 0.04 0.20 mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NGB8204N/D ...

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