SGM2016AM Sony Electronics, SGM2016AM Datasheet
SGM2016AM
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SGM2016AM Summary of contents
Page 1
... GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2016AM/ N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers. ...
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... Crss f = 1MHz 10mA 1.5V G2S 900MHz 5V G1S –0.3V 10 –0.6V 5 –0. –2.0 V – 2 – SGM2016AM/AP (Ta = 25°C) Min. Typ. Max. Unit 50 µA –8 µA –8 µ –2.5 V –2 0.9 2 1.2 2 ...
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... V G1S 30 3 2.5 20 2.0 15 1.5 NFmin 10 1 0.2 0.4 – 3 – SGM2016AM/AP gm vs. V G1S V G2S = 1.5V 1.0V 0.5V 0V –0.5V –1.0V –1.5 –1.0 –0.5 0 – Gate 1 to source voltage [V] Ga vs. V G1S V = 1.5V G2S 1.0V 0.5V –0.8 –0.6 –0.4 –0.2 0 0.2 – Gate 1 to source voltage [V] NF, Ga vs. f ...
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... V = 1.5V 10mA) G2S MAG 7.5 40.0 10.8 39.5 13.9 39.0 16.8 38.5 19.5 37.9 22.0 37.4 24.5 36.8 26.8 36.1 29.1 35.5 31.4 34.8 33.8 34.1 36.1 33.4 38.6 32.6 41.2 31.9 43.9 31.0 46.8 30.2 50.0 29.3 53.4 28.5 57.0 27.5 – 4 – SGM2016AM/AP = 10mA S12 S22 ANG MAG ANG 95.0 0.969 –1.3 87.9 0.966 –3.0 83.6 0.964 –4.2 77.7 0.961 –6.1 82.1 0.957 –7.2 76.3 0.955 –8.8 76.8 0.955 –9.9 78.7 0.954 –11.5 74.4 0.954 –12.8 82.6 0.953 –14.4 79.3 0.952 –15.6 72.4 0.949 –17.2 79 ...
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... SONY CODE EIAJ CODE JEDEC CODE M-254 2.9 ± 0.2 1 0.95 ) 1.1 – 0 0.1 + 0.1 0.4 – 0.05 0.6 – 0. 0.85 ) 1.8 1. Source 2. Gate1 3. Gate2 4. Drain M-254 PACKAGE MASS M-255 2.9 ± 0.2 1 0.95 ) 1.1 – 0.1 + 0.1 0.6 – 0.05 0.10 – 0. 0.85 ) 1.8 1. Source 2. Drain 3. Gate2 4. Gate1 M-255 PACKAGE MASS – 5 – SGM2016AM/ 0.1 + 0.1 0.10 – 0.01 0.01g + 0.2 + 0.1 0.01g ...