SGM2014AM Sony Electronics, SGM2014AM Datasheet

no-image

SGM2014AM

Manufacturer Part Number
SGM2014AM
Description
Gaas N-channel Dual Gate Mes Fet
Manufacturer
Sony Electronics
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SGM2014AM
Manufacturer:
SONY/索尼
Quantity:
20 000
Part Number:
SGM2014AM-T7
Manufacturer:
PH
Quantity:
3 682
For the availability of this product, please contact the sales office.
Description
MES FET for UHF band low-noise amplification.
This FET is suitable for a wide range of applications
including TV tuners, cellular radios, and DBS IF
amplifiers.
Features
• Low voltage operation
• Low noise: NF = 1.5dB (typ.) at 900MHz
• High gain: Ga = 18dB (typ.) at 900MHz
• Low cross-modulation
• High stability
• Built-in gate-protection diode
Application
Structure
Absolute Maximum Ratings (Ta = 25°C)
• Drain to source voltage
• Gate 1 to source voltage
• Gate 2 to source voltage
• Drain current
• Allowable power dissipation
• Channel temperature
• Storage temperature
The SGM2014AM is an N-channel dual gate GaAs
UHF band amplifier, mixer and oscillator
GaAs N-channel dual-gate metal semiconductor field-effect transistor
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
GaAs N-channel Dual Gate MES FET
V
V
V
I
P
Tch
Tstg
D
DSX
G1S
G2S
D
–55 to +150
150
150
12
–5
–5
55
– 1 –
mW
mA
°C
°C
V
V
V
SGM2014AM
E96Y09-PS

Related parts for SGM2014AM

SGM2014AM Summary of contents

Page 1

... GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers ...

Page 2

... 10mA 1.5V G2S 900MHz G1S = 0V 15 –0.3V 10 –0.6V –0.9V 5 –1.2V –1. –2.0 V – 2 – SGM2014AM (Ta = 25°C) Min. Typ. Max. unit 50 µA –8 µA –8 µ –2.5 –2 0 1.5 2 ...

Page 3

... V G1S 30 3 2.5 20 2.0 15 1.5 10 1.0 NFmin 5 0 0.2 0.4 – 3 – SGM2014AM gm vs. V G1S V G2S = 1.5V 1.0V 0.5V 0V –0.5V –1.0V –1.5 –1.0 –0.5 0 – Gate 1 to source voltage [V] Ga vs. V G1S V = 1.5V G2S 1.0V 0.5V –1.2 –1.0 –0.8 –0.6 –0.4 –0.2 0 0.2 – Gate 1 to source voltage [V] NF ...

Page 4

... V = 1.5V 10mA) G2S MAG 5.8 59.7 8.4 59.6 11.0 59.4 13.4 59.1 15.6 58.8 17.8 58.4 19.9 58.0 22.0 57.4 24.0 56.8 25.9 56.2 27.8 55.4 29.7 54.6 31.6 53.8 33.5 52.8 35.5 51.8 37.5 50.7 39.5 49.6 41.6 48.3 43.8 47.0 – 4 – SGM2014AM = 10mA S12 S22 ANG MAG ANG 87.1 0.979 –1.9 78.7 0.979 –4.0 81.9 0.975 –6.1 82.0 0.974 –8.2 78.7 0.970 –10.2 83.6 0.969 –12.1 83.0 0.968 –14.2 77.8 0.967 –16.3 77.2 0.967 –18.2 79.9 0.967 –20.3 81.0 0.962 –22.3 78.3 0.959 –24.4 76 ...

Page 5

... Package Outline Unit 0. 0.1 0.4 – 0.05 ( 0.95 ) SONY CODE EIAJ CODE JEDEC CODE M-254 2.9 ± 0.2 1 0.1 0.6 – 0.05 ( 0.85 ) 1.8 1. Source 2. Gate1 3. Gate2 4. Drain M-254 PACKAGE MASS – 5 – SGM2014AM + 0.2 1.1 – 0 0.1 + 0.1 0.10 – 0.01 0.01g ...

Related keywords