SGM2014AN Sony Electronics, SGM2014AN Datasheet
SGM2014AN
Related parts for SGM2014AN
SGM2014AN Summary of contents
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... GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers ...
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... 10mA 1.5V G2S 900MHz G1S = 0V 15 –0.3V 10 –0.6V –0.9V 5 –1.2V –1. –2.0 V – 2 – SGM2014AN (Ta = 25°C) Min. Typ. Max. unit 50 µA –8 µA –8 µ –2.5 –2 0 1.5 2 ...
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... V G1S 30 3 2.5 20 2.0 15 1.5 10 1.0 NFmin 5 0 0.2 0.4 – 3 – SGM2014AN gm vs. V G1S V G2S = 1.5V 1.0V 0.5V 0V –0.5V –1.0V –1.5 –1.0 –0.5 0 – Gate 1 to source voltage [V] Ga vs. V G1S V = 1.5V G2S 1.0V 0.5V –1.2 –1.0 –0.8 –0.6 –0.4 –0.2 0 0.2 – Gate 1 to source voltage [V] NF ...
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... V = 1.5V 10mA) G2S MAG 5.8 59.7 8.4 59.6 11.0 59.4 13.4 59.1 15.6 58.8 17.8 58.4 19.9 58.0 22.0 57.4 24.0 56.8 25.9 56.2 27.8 55.4 29.7 54.6 31.6 53.8 33.5 52.8 35.5 51.8 37.5 50.7 39.5 49.6 41.6 48.3 43.8 47.0 – 4 – SGM2014AN = 10mA S12 S22 ANG MAG ANG 87.1 0.979 –1.9 78.7 0.979 –4.0 81.9 0.975 –6.1 82.0 0.974 –8.2 78.7 0.970 –10.2 83.6 0.969 –12.1 83.0 0.968 –14.2 77.8 0.967 –16.3 77.2 0.967 –18.2 79.9 0.967 –20.3 81.0 0.962 –22.3 78.3 0.959 –24.4 76 ...
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... Package Outline Unit 0.1 0.3 – 0.05 SONY CODE EIAJ CODE JEDEC CODE M-281 2.0 ± 0.2 1.3 (0.65) (0.65 0.1 0.4 – 0.05 (0.65) (0.6) 1.25 PACKAGE MATERIAL LEAD TREATMENT M-281 LEAD MATERIAL PACKAGE WEIGHT – 5 – SGM2014AN 0.9 ± 0.1 0 ± 0.1 + 0.1 0.1 – 0. Source 2 : Gate Gate Drain EPOXY RESIN SOLDER PLATING COPPER 0.1g ...