SGM161 SeCoS Halbleitertechnologie GmbH, SGM161 Datasheet

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SGM161

Manufacturer Part Number
SGM161
Description
N-channel Enhancement Mode Power Mos.fet
Manufacturer
SeCoS Halbleitertechnologie GmbH
Datasheet
01-Jun-2002 Rev. A
http://www.SeCoSGmbH.com/
*
*
* Reliable And Rugged
Description
The SGM161 utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
Applications
* Notebook PC
* Li-ion Battery Systems
* On-Board Power Supplies
Features
* Cellular And Portable Phones
Thermal Data
Absolute Maximum Ratings
Total Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Linear Derating Factor
Thermal Resistance Junction-ambient
Low On-Resistance
Capable Of 2.5V Gate Drive
Elektronische Bauelemente
Parameter
Parameter
3
3
GS
GS
@4.5V
@4.5V
3
RoHS Compliant Product
Max.
P
I
I
D
D
D
@T
@T
@T
Tj, Tstg
Symbol
Symbol
Rthj-a
V
V
I
N-Channel Enhancement Mode Power Mos.FET
DM
G
A
A
GS
DS
A
=25
=70
=25
o
o
o
C
C
C
REF.
A
B
C
D
E
F
D
S
4.05
1.50
1.30
2.40
0.89
Min.
4.4
5.3A, 20V,R
Millimeter
SGM161
Ratings
Ratings
-55~+150
Any changing of specification will not be informed individual
Max.
4.25
1.70
1.50
2.60
1.20
±
4.6
20
5.3
4.3
0.01
10
90
SOT-89
12
2
DS(ON)
REF.
G
M
H
K
J
L
I
50m
1.40
Min.
0.40
0.35
3.00 REF.
1.50 REF.
0.70 REF.
Millimeter
5° TYP.
Ω
W / C
o
Max.
0.52
1.60
0.41
Unit
C
Unit
V
V
A
A
W
o
A
/W
C
o
Page 1 of 5

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SGM161 Summary of contents

Page 1

... Elektronische Bauelemente Description The SGM161 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. Features Low On-Resistance * * Capable Of 2.5V Gate Drive * Reliable And Rugged Applications * Notebook PC * Li-ion Battery Systems * On-Board Power Supplies * Cellular And Portable Phones Absolute Maximum Ratings ...

Page 2

... 603 Ciss _ 144 Coss _ Crss 111 _ Gfs Symbol Min. Typ Trr _ Qrr ≦ 2 copper pad of FR4 board; 270 ° C/W SGM161 5.3A, 20V,R 50m DS(ON) Max. Unit Test Condition =0V Reference 1 GS, _ ± ...

Page 3

... Elektronische Bauelemente Characteristics Curve http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A SGM161 5.3A, 20V,R DS(ON) N-Channel Enhancement Mode Power Mos.FET Any changing of specification will not be informed individual 50m Ω Page ...

Page 4

... Elektronische Bauelemente http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A SGM161 5.3A, 20V,R DS(ON) N-Channel Enhancement Mode Power Mos.FET Any changing of specification will not be informed individual Ω 50m Page ...

Page 5

... Elektronische Bauelemente http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A SGM161 5.3A, 20V,R DS(ON) N-Channel Enhancement Mode Power Mos.FET Any changing of specification will not be informed individual Ω 50m Page ...

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