SGM2305A SeCoS Halbleitertechnologie GmbH, SGM2305A Datasheet - Page 2

• Manufacturer Part Number: SGM2305A
• Description: P-channel Enhancement Mode Power Mosfet
• Manufacturer: SeCoS Halbleitertechnologie GmbH

http://www.SeCoSGmbH.com/
01-June-2008 Rev. A
ELECTRICAL CHARACTERISTICS
SOURCE-DRAIN DIODE
Notes:
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Trans-conductance
Gate-Source Leakage Current
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Static Drain-Source On-Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
1. Pulse width limited by safe operating area.
2. Pulse width≦300us, duty cycle≦2%.
3. Surface mounted on FR4 board, t ≦10sec.
Elektronische Bauelemente
Parameter
Parameter
2
2
2
2
J
J
=25℃)
=70℃)
ΔBV
Symbol
Symbol
(T
R
BV
V
A
T
T
DSS
C
I
I
C
DS(ON)
Q
Q
C
V
GS(th)
Q
Q
g
GSS
DSS
T
d(on)
T
d(off)
T
oss
= 25°C unless otherwise specified)
rss
SD
DSS
fs
iss
gs
gd
rr
rr
g
r
f
/ ΔT
J
Min
Min
-0.5
-30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ Max Unit
Typ Max Unit
-0.1
735
100
1.8
3.6
10
15
21
15
80
24
19
9
7
P-Channel Enhancement Mode Power MOSFET
-
-
-
-
-
-
-
-
-
-
±100
1325
-1.2
150
250
-1.2
-25
65
80
18
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
V / °C Reference to 25°C, I
-3.2 A, -30 V, R
mΩ
nA
uA
nC
nS
nC
pF
ns
V
V
S
V
SGM2305A
V
V
V
V
V
V
V
V
V
V
I
V
V
V
I
V
R
R
V
V
f = 1.0 MHz
I
I
dl/dt = 100 A / uS
D
D
S
S
GS
DS
DS
GS
DS
DS
GS
GS
GS
GS
DS
GS
DS
GS
G
D
GS
DS
=-1.2A, V
=-3.2A, V
= -3.2 A
= -3.2 A
Any changes of specification will not be informed individually.
= 4.6 Ω
=V
= 3.3 Ω
=-10V, I
=-4.5V, I
=-2.5V, I
=-1.8V, I
= -5V, I
= -30 V, V
= -24 V, V
= -24 V
= -15 V
= -25 V
= 0, I
= ±12V
= -4.5 V
= -10 V
= 0 V
GS
, I
D
D
Test Conditions
= -250 uA
Test Conditions
D
GS
GS
= -250 uA
D
D
D
D
= -3A
=-3.2A
DS(ON)
=-3.0A
=-2.0A
=-1.0A
=0V
=0V
GS
GS
= 0
= 0
80 mΩ
D
= -1 mA
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