SGM3055 SeCoS Halbleitertechnologie GmbH, SGM3055 Datasheet - Page 2

• Manufacturer Part Number: SGM3055
• Description: N-channel Enhancement Mode Power Mos.fet
• Manufacturer: SeCoS Halbleitertechnologie GmbH

01-Jun-2002 Rev. A
http://www.SeCoSGmbH.com/
Source-Drain Diode
Notes: 1.Pulse width limited by safe operating area.
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Rise Time
Turn-off Delay Time
Continuous Source Current(Body Diode)
Pulsed Source Current(Body Diode)
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Fall Time
Input Capacitance
Reverse Transfer Capacitance
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Drain-Source Leakage Current (Tj=150 )
Static Drain-Source On-Resistance
Total Gate Charge
Gate-Source Charge
Output Capacitance
Forward On Voltage
2.Pulse width 300us, dutycycle 2%.
Elektronische Bauelemente
Parameter
Parameter
2
2
≦
2
1
o
C
≦
o
C
o
BV
Symbol
Symbol
R
Td
BV
Td
V
Crss
I
I
Ciss
Coss
V
DS
DSS
DS(ON)
Qg
Qgs
Qgd
GSS
GS(th)
T f
I
Tr
I
(ON)
SM
S D
(Off)
S
DSS
/ Tj
Min.
1.0
Min.
30
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
N-Channel Enhancement Mode Power Mos.FET
Typ.
Typ.
0.037
19.8
260
144
3.2
5.4
1.3
3.6
3.6
13
13
_
_
_
_
_
_
_
_
_
_
Max.
±
Max.
15A, 30V,R
100
250
3.0
100
1.3
25
80
15
_
_
_
_
_
_
_
_
_
_
50
_
_
SGM3055
Any changing of specification will not be informed individual
Unit
V/
Unit
m
nA
uA
uA
V
nC
pF
nS
V
V
A
A
o
Ω
C
DS(ON)
I
Reference to 25 , I
V
S
V
V
V
V
V
V
V
V
V
I
V
R
R
I
V
V
V
=15A, V
Test Condition
D
D
f=1.0MHz
GS
DS
D
GS
DS
DS
DS
Test Condition
GS
GS
DS
GS
GS
=8A
G
D
=8A
GS
DS
=V
=3.4
=1.9
=V
=0V, I
=30V,V
=24V,V
=15V
= 20V
=10V, I
=4.5V, I
100m
=24V
=10V
= 5V
=0V
=25V
±
G
GS,
=0V,V
Ω
Ω
I
D
GS
D
=250uA
=250uA
GS
GS
D
D
=0V,Tj=25
Ω
= 8A
=6A
=0
=0
S
=1.3V
o
C
D
= 1mA
Page 2 of 6
o
C