CY20AAJ-8H Renesas Electronics Corporation., CY20AAJ-8H Datasheet

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CY20AAJ-8H

Manufacturer Part Number
CY20AAJ-8H
Description
Nch Igbt For Strobe Flasher
Manufacturer
Renesas Electronics Corporation.
Datasheet

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To our customers,
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Renesas Electronics website:
Old Company Name in Catalogs and Other Documents
http://www.renesas.com
April 1
Renesas Electronics Corporation
st
, 2010

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CY20AAJ-8H Summary of contents

Page 1

To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...

Page 2

All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...

Page 3

... CY20AAJ-8H Nch IGBT for Strobe Flasher Features V : 400 V CES I : 130 A CM Drive voltage : 4 V High speed switching Outline RENESAS Package code: PRSP0008DA-B (Package name: SOP-8 <8P2S-B> Applications Strobe flasher for cameras Maximum Ratings Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage ...

Page 4

... CY20AAJ-8H Electrical Characteristics Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Fall time Performance Curves Rev.2.00, Nov 29, 2005, page Symbol Min. Typ. V 450 — (BR)CES I — — CES I — — GES V 0.5 0.8 GE(th) V — ...

Page 5

... CY20AAJ-8H Application Example IXe 30Ω V IGBT G Recommended Operation Conditions V 330 120 330 µ Precautions on Usage 1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the device from electrostatic charge. ...

Page 6

... DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. Reference A A Symbol Detail Standard order Standard order code code example CY20AAJ-8H-T13 CY20AAJ-8H Dimension in Millimeters Min Nom Max 4.8 5.0 5.2 4.2 4.4 4.6 1.5 0.1 0.2 0 1.8 0.35 0.4 0.5 0.13 0.15 0.2 0° 10° 5.7 6.0 6.3 1.12 1.27 1.42 ...

Page 7

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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