TF218 Sanyo Semiconductor Corporation, TF218 Datasheet - Page 2

• Manufacturer Part Number: TF218
• Description: N-channel Silicon Junction Fet
• Manufacturer: Sanyo Semiconductor Corporation

Continued from preceding page.
Test Circuit
[Ta=25˚C, V CC =4.5V, R L =1k , Cin=15pF, See specified Test Circuit.]
Voltage Gain
Reduced Voltage Characteristic
Frequency Characteristic
Input Impedance
Output Impedance
Total Harmonic Distortion
Output Noise Voltage
500
450
400
350
300
250
200
150
100
500
400
300
200
100
450
350
250
150
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
50
50
--0.7
0
0
0
1
--0.6
Parameter
15pF
OSC
Drain-to-Source Voltage, V DS -- V
2
Gate-to-Source Voltage, V GS -- V
--0.5
3
I D -- V DS
I D -- V GS
4
--0.4
5
VTVM
--0.3
33 F
+
1kΩ
6
Symbol
V
V NO
THD
--0.2
Z IN
7
G V
G VV
Z O
Gvf
THD
8
V DS =5V
--0.1
B
1kΩ
V IN =10mV, f=1kHz
V IN =10mV, f=1kHz, V CC =4.5 1.5V
f=1kHz to 110Hz
f=1kHz
f=1kHz
V IN =30mV, f=1kHz
V IN =0, A curve
--0.5V
V CC =4.5V
V CC =1.5V
IT02310
IT02312
9
A
Output Impedance
10
0
TF218
Conditions
500
450
400
350
300
250
200
150
100
400
360
320
280
240
200
160
120
50
80
40
--1.0
0
0
0
--0.9
--0.8
Drain-to-Source Voltage, V DS -- V
1
Gate-to-Source Voltage, V GS -- V
--0.7
min
--0.6
I D -- V DS
I D -- V GS
2
25
--0.5
Ratings
typ
1000
--0.4
--3.0
--1.2
1.2
3
--0.3
max
--110
--3.5
--1.0
--0.2
4
V DS =5V
No.7088-2/4
--0.1
--0.5V
IT03015
IT02313
Unit
M
dB
dB
dB
dB
%
--0
5