BSS223PW Infineon Technologies Corporation, BSS223PW Datasheet - Page 3

• Manufacturer Part Number: BSS223PW
• Description: P-channel Mosfets Small-signal-transistor
• Manufacturer: Infineon Technologies Corporation

Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed I
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Rev 1.3
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
V
I
V
t
Q
j
d(on)
r
d(off)
f
S
SM
rr
fs
= 25 °C, unless otherwise specified
iss
oss
rss
(plateau) V
SD
gs
gd
g
rr
çV
I
V
f=1MHz
V
I
V
V
V
T
V
V
di
D
D
Page 3
GS
DD
DD
DD
GS
DD
A
GS
R
F
=-0.31A
=-0.39A, R
DS
=25°C
=-10V, |I
/dt=100A/µs
=0, V
=-10V, V
=-10V, I
=-10V, I
=0 to -4.5V
=-10V, I
=0, I
ç 2*çI
Conditions
F
DS
=-0.39
D
F
D
D
D
ç*R
=-15V,
|
G
GS
=-0.39A
=-0.39A,
=-0.39A
=
=6
DS(on)max
|l
=-4.5V,
D
|,
min.
0.35
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
-0.04
typ.
-0.4
-0.5
-2.2
0.7
3.8
5.1
3.2
7.6
1.1
45
21
17
-1
5
-
-
BSS 223PW
2006-12-04
max.
-0.05 nC
-0.62
-0.39 A
-1.56
-1.33 V
-0.5
-2.7
5.7
7.5
7.6
4.8
9.5
1.4
56
26
22
-
Unit
S
pF
ns
V
ns
nC