FDC5661N Fairchild Semiconductor, FDC5661N Datasheet

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FDC5661N

Manufacturer Part Number
FDC5661N
Description
N-channel Logic Level Powertrench Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet

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FDC5661N
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Part Number:
FDC5661N-F085
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FDC5661N-F085
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FDC5661N-NL
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©2008 Fairchild Semiconductor Corporation
FDC5661N_F085 Rev. A
FDC5661N_F085
N-Channel Logic Level PowerTrench
60V, 4A, 60mΩ
Features
R
R
Typ Q
Low Miller Charge
Qualified to AEC Q101
RoHS Compliant
DS(on)
DS(on)
g(TOT)
= 47mΩ at V
= 60mΩ at V
= 14.5nC at V
GS
GS
= 10V, I
= 4.5V, I
GS
= 10V
D
D
= 4.3A
= 4A
1
Applications
DC/DC converter
Motor Drives
®
MOSFET
October 2008
www.fairchildsemi.com
tm

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FDC5661N Summary of contents

Page 1

... Features R = 47mΩ 10V, I DS(on 60mΩ 4.5V, I DS(on Typ Q = 14.5nC 10V g(TOT) GS Low Miller Charge Qualified to AEC Q101 RoHS Compliant ©2008 Fairchild Semiconductor Corporation FDC5661N_F085 Rev. A ® MOSFET Applications DC/DC converter = 4. Motor Drives 1 October 2008 tm www.fairchildsemi.com ...

Page 2

... Reverse Transfer Capacitance rss R Gate Resistance G Q Total Gate Charge at 10V g(TOT) Q Gate to Source Gate Charge gs Q Gate to Drain “Miller“ Charge gd FDC5661N_F085 Rev 25°C unless otherwise noted A Parameter = 10V copper pad area Package Reel Size SSOT-6 7” 25°C unless otherwise noted ...

Page 3

... This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems FDC5661N_F085 Rev ...

Page 4

... JA 0. Figure 3. 100 V = 10V GS 10 SINGLE PULSE C/W θ FDC5661N_F085 Rev 100 125 150 Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION(s) Normalized Maximum Transient Thermal Impedance - RECTANGULAR PULSE DURATION(s) Figure 4 ...

Page 5

... Figure 7. Saturation Characteristics 2.0 PULSE DURATION = 80 μ s DUTY CYCLE = 0.5% MAX 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -80 - JUNCTION TEMPERATURE J Figure 9. Normalized Drain to Source On Resistance vs Junction Temperature FDC5661N_F085 Rev PULSE DURATION = 80 DUTY CYCLE = 0.5% MAX 10us 100us 12 1ms 8 10ms 100ms 100 300 0 Figure 6. 120 μ ...

Page 6

... Normalized Drain to Source Breakdown Voltage vs Junction Temperature 4. 20V GATE CHARGE(nC) g Figure 13. Gate Charge vs Gate to Source Voltage FDC5661N_F085 Rev. A 2000 1000 100 10 80 120 160 0 Figure 12. Capacitance vs Drain to Source V = 30V DD = 40V iss ...

Page 7

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDC5661N_F085 Rev. A ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...

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