UP04111G Panasonic Corporation of North America, UP04111G Datasheet
UP04111G
Manufacturer Part Number
UP04111G
Description
Transistor With Builtin Resistors
Manufacturer
Panasonic Corporation of North America
Datasheet
1.UP04111G.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
UP04111G0L+
Manufacturer:
WOLFSON
Quantity:
802
Composite Transistors
UP04111G
Silicon PNP epitaxial planar type
For switching/digital circuits
Features
Basic Part Number
Absolute Maximum Ratings T
Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2007
Two elements incorporated into one package (Transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half
UNR2111 × 2
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
Parameter
Parameter
a
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C±3°C
a
= 25°C
Symbol
V
R
V
V
I
I
I
V
V
h
CE(sat)
1
CBO
CEO
EBO
R
CBO
CEO
f
FE
OH
/ R
OL
T
Symbol
1
V
V
T
2
P
I
T
CBO
CEO
stg
C
T
j
I
I
V
V
V
V
I
V
V
V
C
C
C
CB
CE
EB
CE
CC
CC
CB
= –10 µA, I
= –2 mA, I
= –10 mA, I
–55 to +125
= –50 V, I
= –50 V, I
= –6 V, I
= –10 V, I
= –5 V, V
= –5 V, V
= –10 V, I
SJJ00403AED
Rating
–100
–50
–50
125
125
C
B
E
Conditions
B
B
E
B
C
E
B
= 0
= 0
= 0
= – 0.5 V, R
= –2.5 V, R
= 0
= 0
= –5 mA
= 1 mA, f = 200 MHz
= – 0.3 mA
Unit
mW
mA
°C
°C
V
V
L
L
= 1 kΩ
= 1 kΩ
Package
Marking Symbol: 9U
Internal Connection
Code
Pin Name
SSMini6-F2
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
–30%
–4.9
Min
–50
–50
0.8
35
(C1) (B2)
(E1) (B1)
Tr1
6
1
10 kΩ
10 kΩ
R2
Typ
1.0
R1
10
80
5
2
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
R1
10 kΩ
10 kΩ
R2
(C2)
(E2)
Tr2
4
3
– 0.25
+30%
– 0.1
– 0.5
– 0.5
– 0.2
Max
1.2
MHz
Unit
mA
µA
µA
kΩ
V
V
V
V
V
1
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UP04111G Summary of contents
Page 1
... This product complies with the RoHS Directive (EU 2002/95/EC). Composite Transistors UP04111G Silicon PNP epitaxial planar type For switching/digital circuits Features Two elements incorporated into one package (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half ...
Page 2
... This product complies with the RoHS Directive (EU 2002/95/EC). UP04111G P 150 125 100 120 ( °C ) Ambient temperature − 75°C a 120 25°C 80 −25° − 0.1 −1 −10 −100 −1 000 ( mA ) Collector current I ...
Page 3
... This product complies with the RoHS Directive (EU 2002/95/EC). SSMini6-F2 1.60 ±0.05 +0.05 0.20 − 0. (0.5) (0.5) 1.00 ±0.05 (5°) Unit: mm +0.05 0.13 − 0.02 SJJ00403AED UP04111G 3 ...
Page 4
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...