SIA415DJ Vishay, SIA415DJ Datasheet - Page 3
![no-image](/images/manufacturer_photos/0/6/697/vishay_sml.jpg)
SIA415DJ
Manufacturer Part Number
SIA415DJ
Description
P-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet
1.SIA415DJ.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIA415DJ-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69512
S-80435-Rev. B, 03-Mar-08
0.08
0.06
0.04
0.02
10
30
25
20
15
10
0
8
6
4
2
0
5
0
On-Resistance vs. Drain Current and Gate Voltage
0
0
0
I
D
V
= 8.4 A
GS
0.5
5
= 2.5 V
V
DS
8
Q
Output Characteristics
g
- Drain-to-Source Voltage (V)
1.0
10
- Total Gate Charge (nC)
I
D
V
- Drain Current (A)
DS
Gate Charge
= 10 V
1.5
15
16
V
GS
= 5 thru 3 V
V
2.0
DS
20
= 16 V
24
V
V
V
V
GS
GS
GS
GS
2.5
25
= 2.5 V
= 4.5 V
= 2 V
= 1.5 V
New Product
3.0
30
32
2100
1800
1500
1200
900
600
300
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
5
4
3
2
1
0
0
- 50
0
0
I
D
= 5.6 A
On-Resistance vs. Junction Temperature
C
- 25
rss
4
V
V
0.5
DS
GS
Transfer Characteristics
T
0
J
C
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
oss
V
GS
25
Capacitance
8
= 4.5 V, 2.5 V
T
1.0
C
50
C
= 125 °C
iss
Vishay Siliconix
T
C
T
= 25 °C
12
C
75
= -- 55 °C
SiA415DJ
1.5
100
www.vishay.com
16
125
2.0
150
20
3