SIA413DJ Vishay, SIA413DJ Datasheet

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SIA413DJ

Manufacturer Part Number
SIA413DJ
Description
P-channel 12-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIA413DJ-T1-GE3
Manufacturer:
IDT
Quantity:
97
Part Number:
SIA413DJ-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SIA413DJ-T1-GE3
Quantity:
700
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 80 °C/W.
Document Number: 70447
S-80435-Rev. C, 03-Mar-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
- 12
2.05 mm
6
(V)
PowerPAK SC-70-6L-Single
D
5
D
4
0.029 at V
0.034 at V
0.044 at V
S
0.10 at V
D
h
R
1
S
ttp://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
DS(on)
D
2.05 mm
GS
2
GS
GS
GS
G
= - 1.5 V
(Ω)
= - 4.5 V
= - 2.5 V
= - 1.8 V
J
3
= 150 °C)
b, f
P-Channel 12-V (D-S) MOSFET
Ordering Information:SiA413DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
I
- 12
- 12
- 12
Part # code
D
- 3
(A)
a
a
a
d, e
A
= 25 °C, unless otherwise noted
Q
Marking Code
Steady State
23 nC
g
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
A
A
C
A
C
C
A
A
New Product
t ≤ 5 s
B F X
X X X
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Lot Traceability
and Date code
FEATURES
APPLICATIONS
• Halogen-free
• TrenchFET
• New Thermally Enhanced PowerPAK
• Load Switch, PA Switch and Battery Switch for Portable
Symbol
Symbol
T
R
R
SC-70 Package
- Small Footprint Area
- Low On-Resistance
Devices
J
V
V
I
P
, T
DM
I
I
thJC
thJA
GS
DS
D
S
D
stg
®
Power MOSFET
Typical
5.3
28
- 55 to 150
- 2.9
- 10
3.5
2.2
Limit
- 8
- 12
- 12
- 12
- 12
- 40
260
± 8
19
12
b, c
b, c
b, c
b, c
b, c
a
a
a
Maximum
6.5
36
Vishay Siliconix
G
®
P-Channel MOSFET
SiA413DJ
www.vishay.com
D
S
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SIA413DJ Summary of contents

Page 1

... Low On-Resistance - 3 APPLICATIONS • Load Switch, PA Switch and Battery Switch for Portable Devices Marking Code Part # code Lot Traceability and Date code Ordering Information:SiA413DJ-T1-GE3 (Lead (Pb)-free and Halogen-free °C, unless otherwise noted A Symbol ° ° ...

Page 2

... SiA413DJ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... 1 2.0 2.5 3.0 3000 2500 2000 1500 1000 V = 4.5 V 500 1 1.0 0.9 0 SiA413DJ Vishay Siliconix ° 125 ° 0.0 0.3 0.6 0.9 1 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss ...

Page 4

... SiA413DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.2 0.4 0 Source-to-Drain Voltage (V) SD Soure-Drain Diode Forward Voltage 0.8 0 250 µA D 0.6 0.5 0.4 0.3 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.060 0.048 °C J 0.036 0.024 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 70447 S-80435-Rev. C, 03-Mar-08 New Product 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiA413DJ Vishay Siliconix 100 125 T - Case Temperature (°C) C Power Derating www.vishay.com 150 5 ...

Page 6

... SiA413DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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