MTM86127 Panasonic Corporation of North America, MTM86127 Datasheet

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MTM86127

Manufacturer Part Number
MTM86127
Description
Silicon P-channel Mos Fet
Manufacturer
Panasonic Corporation of North America
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MTM861270LBF
Manufacturer:
PANAS0NIC
Quantity:
20 000
Silicon MOS FETs (Small Signal)
MTM86127
Silicon P-channel MOS FET
For DC-DC converter circuits
For switching circuits
 Overview
converter and other switching circuits.
 Features
 Absolute Maximum Ratings T
Note) * : Measuring on ceramic substrate at 40 mm × 38 mm × 0.2 mm
 Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2008
 Low ON resistance: R
 Low short-circuit input capacitance (common source): C
 Small package: WSSMini6-F1 (1.6 mm × 1.6 mm × 0.5 mm)
 Low drive voltage: 1.8 V drive
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Power dissipation
Channel temperature
Storage temperature
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Drain-source ON resistance 1
Drain-source ON resistance 2
Drain-source ON resistance 3
Forward transfer admittance
Short-circuit input capacitance (Common source)
Short-circuit output capacitance (Common source)
Reverse transfer capacitance (Common source)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
MTM86127 is the P-channel MOS FET that is highly suitable for DC-DC
2. * 1: Pulse measurement
P
* 2: Test circuit
* 2
D
* 2
absolute maximum rating without a heat shink: 150 mW
Parameter
Parameter
*
* 2
* 2
on
= 80 mW (V
* 1
* 1
* 1
* 1
a
= 25°C±3°C
GS
a
= 25°C
= 4.0 V)
This product complies with the RoHS Directive (EU 2002/95/EC).
Symbol
V
V
T
I
T
P
I
Symbol
R
R
R
DSS
GSS
DP
D
stg
ch
D
Y
V
DS(on)
DS(on)
DS(on)
t
t
I
I
V
C
C
C
d(off)
d(on)
DSS
GSS
DSS
t
t
TH
oss
iss
rss
r
f
fs
1 I
2 I
3 I
–55 to +150
Rating
I
V
V
I
I
V
V
V
iss
D
D
D
D
D
D
-2.0
-8.0
-20
±10
540
150
DD
DD
DS
GS
DS
= -1.0 mA, V
= -1.0 mA, V
= -1.0 A, V
= -1.0 A, V
= - 0.5 A, V
= -1.0 A, V
= 300 pF
= -10 V, V
= -10 V, V
= -20 V, V
= ±8 V, V
= -10 V, V
SJF00092AED
DS
GS
GS
Unit
mW
Conditions
GS
GS
DS
GS
°C
°C
GS
GS
V
V
A
A
GS
DS
= 0 V to -4 V, I
= -4 V to 0 V, I
= 0
= -4.0 V
= -2.5 V
= -10 V, f = 1 kHz
= -1.8 V
= 0
= 0, f = 1 MHz
= 0
= -10 V
D
D
= -1.0 A
= -1.0 A
 Package
 Marking Symbo: MK
 Internal Connection
 Code
 Pin Name
WSSMini6-F1
1: Drain
2: Drain
3: Gate
- 0.40
Min
-20
3.0
(D)
(D)
6
1
- 0.75
Typ
100
140
300
80
30
35
57
55
6
8
(D)
(D)
5
2
4: Source
5: Drain
6: Drain
-1.10
Max
-1.0
(G)
(S)
±10
120
170
230
4
3
Unit
mW
mW
mW
mA
mA
pF
pF
pF
ns
ns
ns
ns
V
V
S
1

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MTM86127 Summary of contents

Page 1

... This product complies with the RoHS Directive (EU 2002/95/EC). Silicon MOS FETs (Small Signal) MTM86127 Silicon P-channel MOS FET For DC-DC converter circuits For switching circuits  Overview MTM86127 is the P-channel MOS FET that is highly suitable for DC-DC converter and other switching circuits.  Features  Low ON resistance 4  ...

Page 2

... This product complies with the RoHS Directive (EU 2002/95/EC). MTM86127 Test circuit µs W Duty Cycle ≤ 1% − Ω − 1 Ω OUT OUT S t d(on) SJF00092AED 10% 90% 90% 10 d(off) f ...

Page 3

... This product complies with the RoHS Directive (EU 2002/95/EC). WSSMini6-F1 1.60 ±0.05 +0.05 0.20 −0. (0.50) (0.50) 1.00 ±0.05 5° SJF00092AED MTM86127 Unit: mm +0.05 0.13 −0.03 3 ...

Page 4

Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...

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