QS6K1 ROHM Co. Ltd., QS6K1 Datasheet - Page 2

• Manufacturer Part Number: QS6K1
• Description: 2.5v Drive Nch+nch Mos Fet
• Manufacturer: ROHM Co. Ltd.

Transistors
<It is the same characteristics for the Tr1 and Tr2>
<It is the same characteristics for the Tr1 and Tr2>
∗Pulsed
∗Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Forward voltage
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-Drain) (Ta=25°C)
Parameter
Parameter
charge
charge
V
Symbol
Symbol
R
V
(BR) DSS
t
t
C
I
I
C
V
GS (th)
DS (on)
C
d (on)
d (off)
Q
Q
Y
GSS
DSS
Q
t
t
oss
SD
iss
rss
r
gd
fs
f
gs
g
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
Min.
Min.
0.5
1.0
30
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
Typ.
170
180
260
1.7
0.4
0.4
77
25
15
15
−
−
−
−
−
7
7
6
−
Max.
Max.
238
252
364
1.5
2.4
1.2
10
−
1
−
−
−
−
−
−
−
−
−
−
Unit
Unit
mΩ
µA
µA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
V
S
V
V
I
V
V
I
I
I
I
V
V
f=1MHz
I
V
R
R
V
V
I
I
D
D
D
D
D
D
D
S
GS
DS
DS
DS
GS
GS
L
G
DD
GS
=3.2A, V
=1mA, V
=1.0A, V
=1.0A, V
=1.0A, V
=1.0A, V
=500mA, V
=1.0A
=30.0Ω
=10Ω
=30V, V
=10V, I
=10V
=12V, V
=0V
=4.5V
=4.5V
15V
Conditions
GS
GS
GS
GS
DS
Conditions
GS
D
DS
GS
=1mA
=10V
=0V
=0V
=4.5V
=4.0V
=2.5V
DD
=0V
=0V
15V
Rev.B
QS6K1
2/3