QS6M3 ROHM Co. Ltd., QS6M3 Datasheet - Page 2

• Manufacturer Part Number: QS6M3
• Description: 2.5v Drive Nch+pch Mosfet
• Manufacturer: ROHM Co. Ltd.

Transistors
N-ch
∗Pulsed
∗Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Forward voltage
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-Drain) (Ta=25°C)
Parameter
Parameter
charge
charge
V
Symbol
Symbol
R
V
(BR) DSS
t
t
I
C
V
I
DS (on)
C
C
Q
GS (th)
d (on)
d (off)
Q
GSS
Y
Q
DSS
t
t
oss
SD
iss
rss
r
f
gs
gd
fs
g
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
Min.
Min.
0.5
1.0
30
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
Typ.
170
180
260
1.6
0.5
0.9
80
25
15
18
15
15
−
−
−
−
−
−
7
Max.
Max.
±10
230
245
360
1.2
1.5
−
1
−
−
−
−
−
−
−
−
−
−
−
Unit
Unit
mΩ
µA
µA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
V
S
I
V
I
V
V
I
I
I
I
V
V
f=1MHz
I
V
R
R
V
V
I
S
D
D
D
D
D
D
D
=3.2A, V
GS
DS
DS
DS
GS
GS
DD
GS
=1mA, V
=1.5A, V
=1.5A, V
=1.0A, V
=1.0A, V
=1A, V
L
G
=1.5A
=15Ω
=10Ω
=±12V, V
=30V, V
=10V, I
=10V
=0V
=4.5V
=4.5V
15V
DD
Conditions
GS
Conditions
GS
GS
GS
GS
DS
D
GS
=1mA
R
R
=0V
=0V
=4.5V
=4.0V
=2.5V
=10V
15V
DS
=0V
L
G
=10Ω
=0V
=10Ω
Rev.B
QS6M3
2/7