QS6U24 ROHM Co. Ltd., QS6U24 Datasheet
QS6U24
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QS6U24 Summary of contents
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... QS6U24 Structure Silicon P-channel MOS FET Schottky Barrier DIODE Features 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package. 2) Low on-state resisternce with a fast switching. 3) Low voltage drive (4V). 4) Built-in schottky barrier diode has low forward voltage. ...
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... V GS − − = −1.0A 0 Min. Typ. Max. Unit − − −1 =−0.3A Min. Typ. Max. Unit − − 0. =0.7A F − − µA 200 V =20V R QS6U24 Conditions =0V DS = −1mA D = −10V GS = −4. − −0.5A D Conditions =0V GS Conditions Rev.B 2/4 ...
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... Ta=25°C f=1MH V =0V GS 100 0.01 0 DRAIN-SOURCE VOLTAGE : −V DS Fig.8 Typical Capacitance vs. Drain-Source Voltage QS6U24 10000 Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 1000 100 0 DRAIN CURRENT : −I Fig.3 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) 10000 =−4. =− ...
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... Fig.13 Gate Charge Measurement Circuit D.U. d(on) Fig.12 Switching Waveforms D.U. Fig.14 Gate Charge Waveforms QS6U24 Pulse Width 10% 50% 50% 90% 10% 10% 90% 90 d(off off Charge Rev.B 4/4 ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...