NTZD3155C ON Semiconductor, NTZD3155C Datasheet

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NTZD3155C

Manufacturer Part Number
NTZD3155C
Description
Small Signal Mosfet Complementary 20 V, 540 Ma/ -430 Ma, With Esd Protection, Sot-563
Manufacturer
ON Semiconductor
Datasheet

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NTZD3155C
Small Signal MOSFET
Complementary 20 V, 540 mA / -430 mA,
with ESD protection, SOT-563 package.
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using 1 in sq. pad size
© Semiconductor Components Industries, LLC, 2007
May, 2007 - Rev. 2
MAXIMUM RATINGS
Drain-to-Source Voltage
Gate-to-Source Voltage
N-Channel
Continuous Drain
Current (Note 1)
P-Channel
Continuous Drain
Current (Note 1)
Power Dissipation
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
Leading Trench Technology for Low R
High Efficiency System Performance
Low Threshold Voltage
ESD Protected Gate
Small Footprint 1.6 x 1.6 mm
These are Pb-Free Devices
DC-DC Conversion Circuits
Load/Power Switching with Level Shift
Single or Dual Cell Li-Ion Battery Operated Systems
High Speed Circuits
Cell Phones, MP3s, Digital Cameras, and PDAs
(Cu area = 1.127 in sq [1 oz] including traces).
(Note 1)
(1/8” from case for 10 s)
Parameter
N-Channel
P-Channel
(T
Steady
t v 5 s
Steady
t v 5 s
Steady
t v 5 s
J
State
State
State
= 25°C unless otherwise specified)
T
T
T
T
T
T
T
t
p
A
A
A
A
A
A
A
= 10 ms
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
DS(on)
Symbol
V
T
V
Performance
I
P
T
DSS
STG
T
I
DM
I
GS
D
S
J
D
L
,
-55 to
Value
-430
-310
-455
1500
-750
540
390
570
250
280
150
350
260
20
±6
1
Unit
mW
mA
mA
mA
°C
°C
V
V
†For information on tape and reel specifications,
NTZD3155CT1G
NTZD3155CT2G
NTZD3155CT5G
N-Channel
P-Channel
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
V
(BR)DSS
-20 V
20 V
(Note: Microdot may be in either location)
Device
6
G
D
CASE 463A
S
SOT-563-6
2
1
1
TW
M
G
ORDERING INFORMATION
1
1
2
3
http://onsemi.com
PINOUT: SOT-563
0.5 W @ -4.5 V
0.6 W @ -2.5 V
1.0 W @ -1.8 V
0.4 W @ 4.5 V
0.5 W @ 2.5 V
0.7 W @ 1.8 V
= Specific Device Code
= Date Code
= Pb-Free Package
R
(Pb-Free)
(Pb-Free)
(Pb-Free)
SOT-563
SOT-563
SOT-563
Package
DS(on)
Top View
Publication Order Number:
Typ
4000 / Tape & Reel
4000 / Tape & Reel
8000 / Tape & Reel
MARKING
DIAGRAM
TW M G
6
5
4
Shipping
NTZD3155C/D
G
-430 mA
(Note 1)
540 mA
I
D
Max
D
G
S
2
1
2

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NTZD3155C Summary of contents

Page 1

... Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION † Device Package Shipping SOT-563 4000 / Tape & Reel (Pb-Free) SOT-563 4000 / Tape & Reel (Pb-Free) SOT-563 8000 / Tape & Reel (Pb-Free) Publication Order Number: NTZD3155C/D ...

Page 2

... Drain-to-Source On Resistance Forward Transconductance CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance 3. Pulse Test: pulse width v300 ms, duty cycle v2% NTZD3155C Symbol R qJA = 25°C unless otherwise specified) J Symbol N/P Test Condition V ...

Page 3

... Fall Time Turn-On Delay Time t Rise Time Turn-Of f Delay Time t d(OFF) Fall Time Drain-Source Diode Characteristics Forward Diode Voltage Reverse Recovery Time 4. Switching characteristics are independent of operating junction temperatures NTZD3155C = 25°C unless otherwise specified) J N/P Test Condition G(TOT) G( ...

Page 4

... V , GATE-T O-SOURCE VOLTAGE (V) GS Figure 3. On-Resistance versus Gate-to-Source Voltage 2 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 - JUNCTION TEMPERATURE (°C) J Figure 5. On-Resistance Variation with Temperature NTZD3155C (T = 25°C unless otherwise noted 25° 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0 0.5 1 GATE-T O-SOURCE VOLTAGE (V) GS Figure 2 ...

Page 5

... 0 4 d(OFF d(ON GATE RESISTANCE (W) G Figure 9. Resistive Switching Time Variation versus Gate Resistance NTZD3155C (T = 25°C unless otherwise noted 25° ISS 0.2 0.4 Q ...

Page 6

... GATE-T O-SOURCE VOLTAGE (V) GS Figure 3. On-Resistance vs. Gate-to-Source Voltage 1 -0. -4 1.4 1.2 1 0.8 0.6 -50 - JUNCTION TEMPERATURE (°C) J Figure 5. On-Resistance Variation with Temperature NTZD3155C ( ≥ - 0.8 0.6 0 25° -0. 1 25°C J 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.1 0 Figure 4. On-Resistance vs. Drain Current and ...

Page 7

... DRAIN-T O-SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 100 t d(OFF d(ON GATE RESISTANCE (W) G Figure 9. Resistive Switching Time Variation vs. Gate Resistance NTZD3155C (T = 25°C unless otherwise noted 25° 0.2 0.4 ...

Page 8

... C 0.08 0.12 0.18 0.003 0.005 0.007 D 1.50 1.60 1.70 0.059 0.062 0.066 E 1.10 1.20 1.30 0.043 0.047 0.051 e 0.5 BSC 0.02 BSC L 0.10 0.20 0.30 0.004 0.008 0.012 H 1.50 1.60 1.70 0.059 0.062 0.066 E mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTZD3155C/D ...

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