BSO612CVG Infineon Technologies Corporation, BSO612CVG Datasheet - Page 2

• Manufacturer Part Number: BSO612CVG
• Description: Complementary Mosfets 60v Small-signal-transistor
• Manufacturer: Infineon Technologies Corporation

Static Characteristics, at T
Drain- source breakdown voltage
V
V
Gate threshold voltage, V
I
I
Zero gate voltage drain current
V
V
V
V
Gate-source leakage current
V
V
Drain-source on-state resistance
V
V
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Termal Characteristics
Parameter
Dynamic Characteristics
Thermal resistance, junction - soldering point
( Pin 4)
SMD version, device on PCB:
@ min. footprint; t
@ 6 cm
@ min. footprint; t
@ 6 cm
D
D
GS
GS
DS
DS
DS
DS
GS
GS
GS
GS
= 20 µA
= -450 µA
= 60 V, V
= 60 V, V
= -60 V, V
= -60 V, V
= 0 V, I
= 0 V, I
= 20 V, V
= -20 V, V
= 10 V, I
= -10 V , I
2
2
cooling area
cooling area
D
D
D
= 250 µA
= -250 µA
GS
GS
DS
D
GS
GS
DS
= 3 A
= -2 A
= 0 V, T
= 0 V, T
= 0 V
= 0 V, T
= 0 V, T
= 0 V
£
£
10 sec.
10 sec.
1)
1)
; t
; t
j
j
GS
j
j
= 25 °C
= 125 °C
£
£
= 25 °C
= 125 °C
j
10 sec.
10 sec.
= V
= 25 °C, unless otherwise specified
DS
Rev. 2.0
Page 2
N
P
N
P
N
N
P
P
N
P
N
P
N
P
N
N
P
P
V
V
I
I
R
Symbol
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
thJS
thJA
min.
-2.1
-60
2.1
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.09
0.22
-0.1
typ.
0.1
-10
-10
10
10
-3
3
BSO 612 CV G
-
-
-
-
-
-
-
-
2006-08-25
-100
-100
max.
0.12
62.5
62.5
100
100
110
0.3
40
40
70
-4
-1
4
1
-
-
V
µA
nA
W
Unit
K/W