NTHD4P02F ON Semiconductor, NTHD4P02F Datasheet - Page 2

• Manufacturer Part Number: NTHD4P02F
• Description: Power Mosfet And Schottky Diode
• Manufacturer: ON Semiconductor

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq [1 oz] including traces).
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
THERMAL RESISTANCE RATINGS
MOSFET ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 3)
DRAIN−SOURCE DIODE CHARACTERISTICS (Note 2)
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS
Junction−to−Ambient (Note 1)
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Drain−to−Source On− Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Maximum Instantaneous Forward Voltage
Maximum Instantaneous Reverse Current
Maximum Voltage Rate of Change
Non−Repetitive Peak Surge Current
Parameter
Parameter
Parameter
Steady State
t v 5 s
V
Symbol
Q
Symbol
V
R
Q
t
(BR)DSS
C
C
t
d(OFF)
QRR
GS(TH)
dv/dt
I
I
C
G(TOT)
Q
Q
d(ON)
I
DS(on)
V
tRR
g
G(TH)
DSS
GSS
FSM
V
OSS
RSS
I
ta
tb
ISS
FS
t
t
SD
GS
GD
R
r
f
F
(T
J
= 25°C unless otherwise noted)
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NTHD4P02F
V
V
DS
DS
Halfwave, Single Pulse, 60 Hz
V
V
= −16 V, V
= −16 V, V
V
GS
GS
(T
V
V
V
V
V
V
V
I
D
GS
T
DS
GS
GS
GS
DS
GS
GS
J
2
J
= −4.5 V, V
= −4.5 V, V
= −2.2 A, R
dI
= 25°C unless otherwise noted)
Test Conditions
Test Conditions
= 25°C
= V
= −10 V, I
= 0 V, I
= 0 V, f = 1.0 MHz,
= 0 V, I
= 0 V, V
= −4.5, I
= −2.5, I
S
V
I
I
/dt = 100 A/ms
V
V
V
V
D
S
I
I
I
DS
DS
F
F
F
GS
R
R
R
= −2.1 A
= −2.2 A
= 0.1 A
= 0.5 A
= 1.0 A
GS
GS
, I
= −10 V
= 10 V
= 20 V
= 20 V
= 0 V,
D
S
D
= 0 V, T
= 0 V, T
GS
D
D
= −2.1 A ,
= −250 mA
D
DS
DD
= −250 mA
G
= −2.2 A
= −1.7 A
= −1.7 A
= ±12 V
= 2.5 W
= −10 V,
= −16 V,
J
J
= 25°C
= 85°C
Symbol
R
qJA
−0.6
Min
Min
−20
10,000
−0.75
0.130
0.200
−0.85
0.425
0.480
0.510
Typ
−23
185
Typ
Max
5.0
3.0
0.2
0.5
0.9
7.0
110
95
30
13
33
27
32
10
22
15
60
0.155
0.240
−1.15
0.575
±100
Max
−1.0
−5.0
−1.2
Max
300
150
6.0
1.0
5.0
50
12
25
50
40
23
Units
°C/W
Units
Units
V/ns
nA
nC
nC
mA
pF
mA
ns
ns
W
V
V
S
V
V
A