XP06113 Panasonic Corporation of North America, XP06113 Datasheet
XP06113
Manufacturer Part Number
XP06113
Description
Transistor With Builtin Resistors
Manufacturer
Panasonic Corporation of North America
Datasheet
1.XP06113.pdf
(3 pages)
Composite Transistors
XP06113
Silicon PNP epitaxial planar type
For switching/digital circuits
■ Features
■ Basic Part Number
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2005
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by one half
• UNR2113 (UN2113) × 2
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
(Transistors with built-in resistor)
Parameter
Parameter
(XP6113)
a
Symbol
= 25°C ± 3°C
V
V
Symbol
T
V
R
P
CBO
I
T
V
V
CEO
a
I
I
I
V
stg
V
C
1
CE(sat)
T
h
CBO
j
CEO
EBO
R
f
= 25°C
CBO
CEO
FE
OH
OL
/ R
T
1
2
−55 to +150
Rating
I
I
V
V
V
V
I
V
V
V
−100
C
C
C
−50
−50
150
150
Note) The part number in the parenthesis shows conventional part number.
CB
CE
EB
CE
CC
CC
CB
= −10 µA, I
= −2 mA, I
= −10 mA, I
SJJ00200CED
= −50 V, I
= −6 V, I
= −10 V, I
= −50 V, I
= −5 V, V
= −5 V, V
= −10 V, I
Conditions
Unit
mW
B
C
mA
°C
°C
E
V
V
B
B
B
B
C
E
E
= 0
= 0
= 0
= − 0.5 V, R
= −3.5 V, R
= 0
= 0
= −5 mA
= − 0.3 mA
= 1 mA, f = 200 MHz
L
Marking Symbol: 6W
Internal Connection
L
= 1 kΩ
1: Emitter (Tr1)
2: Emitter (Tr2)
3: Base (Tr2)
= 1 kΩ
EIAJ : SC-88
10˚
(0.65) (0.65)
1
0.2
6
1.3
2.0
±0.05
±0.1
±0.1
−30%
−4.9
Min
−50
−50
0.8
5
80
Tr1
2
6
1
4
3
Typ
1.0
47
80
5
2
4: Collector (Tr2)
5: Base (Tr1)
6: Collector (Tr1)
SMini6-G1 Package
− 0.25
Tr2
+30%
4
3
− 0.1
− 0.5
− 0.1
− 0.2
Max
1.2
0.12
Unit: mm
+0.05
–0.02
MHz
Unit
mA
µA
µA
kΩ
V
V
V
V
V
1
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XP06113 Summary of contents
Page 1
... Composite Transistors XP06113 (XP6113) Silicon PNP epitaxial planar type For switching/digital circuits ■ Features • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half ■ Basic Part Number • UNR2113 (UN2113) × 2 ■ ...
Page 2
... XP06113 250 200 150 100 120 160 ( °C ) Ambient temperature T a 400 = − 75° 300 25°C 200 −25°C 100 0 −1 −10 −100 −1 000 ( mA ) Collector current I C − ...
Page 3
This product complies with the RoHS Directive (EU 2002/95/EC). Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book ...