XP03312 Panasonic Corporation of North America, XP03312 Datasheet - Page 2
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XP03312
Manufacturer Part Number
XP03312
Description
Silicon Npn Pnp Epitaxial Planer Transistor
Manufacturer
Panasonic Corporation of North America
Datasheet
1.XP03312.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
XP0331200L
Manufacturer:
TOSH
Quantity:
104
Part Number:
XP0331200L
Manufacturer:
PANASONIC/松下
Quantity:
20 000
XP03312
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2
• Tr1
• Tr2
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
Common characteristics chart
250
200
150
100
50
0
0
Ambient temperature T
40
Parameter
Parameter
P
T
T
80
a
120
a
( °C )
160
a
= 25°C ± 3°C
Symbol
Symbol
V
R
V
R
V
V
V
V
I
I
I
V
I
I
I
V
V
V
1
1
CE(sat)
CE(sat)
h
h
CBO
CBO
CEO
EBO
R
CEO
EBO
R
f
f
CBO
CEO
CBO
CEO
FE
OH
OL
/ R
FE
OH
OL
/ R
T
T
1
1
2
2
I
I
V
V
V
V
I
V
V
V
I
I
V
V
V
V
I
V
V
V
C
C
C
C
C
C
CB
CE
EB
CE
CC
CC
CB
CB
CE
EB
CE
CC
CC
CB
= 10 µA, I
= 2 mA, I
= 10 mA, I
= −10 µA, I
= −2 mA, I
= −10 mA, I
SJJ00158BED
= 50 V, I
= 6 V, I
= 10 V, I
= −50 V, I
= −6 V, I
= −10 V, I
= 50 V, I
= 5 V, V
= 5 V, V
= 10 V, I
= −50 V, I
= −5 V, V
= −5 V, V
= −10 V, I
B
C
E
Conditions
Conditions
B
B
B
B
C
B
E
E
C
= 0
= 0
E
= 0
B
B
B
B
C
E
E
= 5 mA
= 0.3 mA
= 0.5 V, R
= 2.5 V, R
= 0
= 0
= −2 mA, f = 200 MHz
= 0
= 0
= 0
= − 0.5 V, R
= −2.5 V, R
= 0
= 0
= −5 mA
= − 0.3 mA
= 1 mA, f = 200 MHz
L
L
= 1 kΩ
= 1 kΩ
L
L
= 1 kΩ
= 1 kΩ
−30%
−30%
−4.9
Min
Min
−50
−50
4.9
0.8
0.8
50
50
60
60
Typ
150
Typ
1.0
1.0
22
22
80
− 0.25
+30%
+30%
− 0.1
− 0.5
− 0.2
− 0.2
Max
Max
0.25
0.1
0.5
0.2
0.2
1.2
1.2
MHz
MHz
Unit
Unit
mA
mA
µA
µA
µA
µA
kΩ
kΩ
V
V
V
V
V
V
V
V
V
V