XN01507 Panasonic Corporation of North America, XN01507 Datasheet
XN01507
Manufacturer Part Number
XN01507
Description
Silicon Npn Epitaxial Planer Transistor
Manufacturer
Panasonic Corporation of North America
Datasheet
1.XN01507.pdf
(3 pages)
Composite Transistors
XN01507
Silicon NPN epitaxial planer transistor
For high break down voltage and low noise amplification
I
I
I
I
*1
G
G
G
Rating
of
element
Overall
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Forward current transfer h
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Ratio between 2 elements
Features
Two elements incorporated into one package.
(Emitter-coupled transistors)
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
2SD0814(2SD814) × 2 elements
Absolute Maximum Ratings
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
Parameter
FE
ratio
Symbol
(XN1507)
V
V
V
T
I
P
I
T
CBO
CEO
EBO
CP
stg
C
T
j
V
V
I
h
h
V
f
C
CBO
FE
T
FE
(Ta=25˚C)
Symbol
CEO
EBO
CE(sat)
ob
(small/large)
(Ta=25˚C)
–55 to +150
Ratings
150
150
100
300
150
*1
50
5
I
I
V
V
V
I
V
V
C
E
C
CB
CB
CE
CE
CB
= 10µA, I
= 100µA, I
= 30mA, I
Note) The Part number in the Parenthesis shows conventional part number.
= 10V, I
= 5V, I
= 5V, I
= 100V, I
= 10V, I
Unit
mW
C
C
mA
mA
Conditions
C
E
˚C
˚C
V
V
V
B
E
= 10mA
= 10mA
B
= –10mA, f = 200MHz
= 0
E
= 0, f = 1MHz
= 3mA
= 0
= 0
Marking Symbol:
Internal Connection
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Base (Tr2)
10˚
3
2
(0.95) (0.95)
min
150
0.5
0.30
90
2.90
5
1.9
4
5
4
3
+0.10
–0.05
+0.20
–0.05
±0.1
5
1
4O
0.99
150
typ
2.3
Tr1
Tr2
4 : Emitter
5 : Base (Tr1)
EIAJ : SC–74A
Mini5-G1 Pakage
max
450
1
2
1
1
0.16
+0.10
–0.06
Unit: mm
MHz
Unit
µA
pF
V
V
V
1
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XN01507 Summary of contents
Page 1
... Composite Transistors XN01507 (XN1507) Silicon NPN epitaxial planer transistor For high break down voltage and low noise amplification I Features G Two elements incorporated into one package. (Emitter-coupled transistors) G Reduction of the mounting area and assembly cost by one half. I Basic Part Number of Element 2SD0814(2SD814) × 2 elements ...
Page 2
... Collector to emitter voltage — 600 V =10V CE 500 400 300 Ta=75˚C 25˚C 200 – 25˚C 100 0 0.1 0 100 ( mA ) Collector current I C XN01507 I — 120 V =10V CE 25˚C 100 Ta=75˚C – 25˚ 0.4 0.8 1.2 1.6 2 Base to emitter voltage — I ...
Page 3
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...