XN04402 Panasonic Corporation of North America, XN04402 Datasheet
XN04402
Manufacturer Part Number
XN04402
Description
Silicon Pnp Epitaxial Planer Transistor
Manufacturer
Panasonic Corporation of North America
Datasheet
1.XN04402.pdf
(3 pages)
Composite Transistors
XN04402
Silicon PNP epitaxial planar type
For general amplification
■ Features
■ Basic Part Number
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2004
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by one half
• 2SB0710 (2SB710) × 2
Collector output capacitance
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
(Common base, input open circuited)
2. * : Pulse measurement
Parameter
Parameter
(XN4402)
*
*
*
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
V
I
P
I
T
V
V
V
CBO
CEO
EBO
a
CP
I
stg
h
h
C
CE(sat)
BE(sat)
C
T
CBO
j
f
CBO
CEO
EBO
FE1
FE2
= 25°C
T
ob
−55 to +150
Rating
I
I
I
V
V
V
I
I
V
V
−500
C
C
E
C
C
−60
−50
300
150
CB
CE
CE
CB
CB
Note) The part number in the parenthesis shows conventional part number.
−5
−1
= −10 µA, I
= −2 mA, I
= −10 µA, I
= −300 mA, I
= −300 mA, I
SJJ00072BED
= −10 V, I
= −10 V, I
= −20 V, I
= −10 V, I
= −10 V, I
Conditions
Unit
mW
B
mA
°C
°C
E
C
V
V
V
A
C
C
E
E
E
= 0
= 0
= 0
B
B
= 0
= 0, f = 1 MHz
= −150 mA
= −500 mA
= 50 mA, f = 200 MHz
= −30 mA
= −30 mA
Marking Symbol: OH
Internal Connection
1: Collector (Tr1)
2: Base (Tr2)
3: Emitter (Tr2)
EIAJ : SC-74
10˚
0.30
0.50
4
3
(0.95)
+0.10
–0.05
+0.10
–0.05
2.90
2
1.9
5
±0.1
+0.20
–0.05
(0.95)
Min
−60
−50
−5
85
40
Tr2
6
1
4
3
− 0.35 − 0.60
−1.1
Typ
200
5
2
6
4: Collector (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
Tr1
6
1
− 0.1
Max
−1.5
340
15
0.16
+0.10
–0.06
Unit: mm
MHz
Unit
µA
pF
V
V
V
V
V
1
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XN04402 Summary of contents
Page 1
... Composite Transistors XN04402 (XN4402) Silicon PNP epitaxial planar type For general amplification ■ Features • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half ■ Basic Part Number • 2SB0710 (2SB710) × 2 ■ Absolute Maximum Ratings T ...
Page 2
... XN04402 500 400 300 200 100 120 160 ( °C ) Ambient temperature T a CE(sat) C − −1 = 75° −10 −1 25°C −25°C −10 −2 −10 −3 −1 −10 −10 − Collector current I C ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...