XN01401 Panasonic Corporation of North America, XN01401 Datasheet
XN01401
Manufacturer Part Number
XN01401
Description
Silicon Pnp Epitaxial Planer Transistor
Manufacturer
Panasonic Corporation of North America
Datasheet
1.XN01401.pdf
(4 pages)
Composite Transistors
XN01401
Silicon PNP epitaxial planar type
For general amplification
■ Features
■ Basic Part Number
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2004
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by one half
• 2SB0709A (2SB709A) × 2
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
h
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
(Emitter-coupled transistors)
FE
ratio
2. * : Ratio between 2 elements
*
Parameter
Parameter
(XN1401)
a
Symbol
= 25°C ± 3°C
V
V
V
h
Symbol
T
V
I
P
FE(Small/
I
T
V
V
V
CBO
CEO
EBO
a
CP
Large)
I
I
stg
C
CE(sat)
C
T
h
CBO
j
CEO
f
CBO
CEO
EBO
= 25°C
FE
T
ob
−55 to +150
Rating
I
I
I
V
V
V
V
I
V
V
−100
−200
C
C
E
C
−60
−50
300
150
CB
CE
CE
CE
CB
CB
Note) The part number in the parenthesis shows conventional part number.
−7
= −10 µA, I
= −2 mA, I
= −10 µA, I
= −100 mA, I
SJJ00027BED
= −10 V, I
= −10 V, I
= −10 V, I
= −20 V, I
= −10 V, I
= −10 V, I
Conditions
Unit
mW
B
mA
mA
°C
°C
E
C
V
V
V
B
C
C
E
E
E
= 0
= 0
= 0
B
= 0
= 0
= −2 mA
= −2 mA
= 1 mA, f = 200 MHz
= 0, f = 1 MHz
= −10 mA
Marking Symbol: 5V
Internal Connection
1: Collector (Tr1)
2: Collector (Tr2)
3: Base (Tr2)
EIAJ: SC-74A
10˚
3
2
(0.95) (0.95)
0.30
2.90
1.9
4
+0.10
–0.05
0.50
±0.1
Min
−60
−50
+0.20
–0.05
160
Tr2
−7
3
2
5
1
− 0.3
0.99
Typ
2.7
80
4
4: Emitter
5: Base (Tr1)
Tr1
Mini5-G1 Package
5
1
− 0.1
−100
− 0.5
Max
460
0.16
+0.10
–0.06
Unit: mm
MHz
Unit
µA
µA
pF
V
V
V
V
1
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XN01401 Summary of contents
Page 1
... Composite Transistors XN01401 (XN1401) Silicon PNP epitaxial planar type For general amplification ■ Features • Two elements incorporated into one package (Emitter-coupled transistors) • Reduction of the mounting area and assembly cost by one half ■ Basic Part Number • 2SB0709A (2SB709A) × 2 ■ ...
Page 2
... XN01401 500 400 300 200 100 120 160 ( °C ) Ambient temperature T a −400 = − 25° −350 −300 −250 −200 −150 −100 −50 0 −0.4 −0.8 −1.2 −1 Base-emitter voltage V BE ...
Page 3
... 25° 100 kHz 8 10 kHz − Emitter current I (mA) E SJJ00027BED XN01401 h parameter − 270 Hz = 25° (µ (kΩ) ie −4 h (× − ...
Page 4
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...