HAT1038R Renesas Electronics Corporation., HAT1038R Datasheet - Page 4

• Manufacturer Part Number: HAT1038R
• Description: Silicon P Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT1038R, HAT1038RJ
Rev.5.00 Sep 07, 2005 page 4 of 7
–100
–20
–40
–60
–80
500
200
100
Static Drain to Source on State Resistance
0.5
0.4
0.3
0.2
0.1
50
20
10
–0.1 –0.2
0
–40
5
0
0
Reverse Drain Current
I
Pulse Test
D
V
Case Temperature
Dynamic Input Characteristics
DS
= –3.5 A
Body-Drain Diode Reverse
V
Gate Charge
GS
0
8
–10 V
V
= –4 V
vs. Temperature
DD
Recovery Time
–0.5
= –10 V
16
40
–25 V
–50 V
V
GS
–1
–0.5 A
di / dt = 50 A / µs
V
–0.5 A, –1 A
GS
V
80
24
DD
= 0, Ta = 25°C
Qg (nc)
–2
–1 A
= –50 V
Tc (°C)
–25 V
–10 V
I
D
I
120
DR
32
= –2 A
–5
–2 A
(A)
–10
160
40
–12
–16
–20
–4
–8
0
2000
1000
1000
500
200
100
300
100
0.5
0.2
50
20
10
20
10
30
10
–0.1
–0.1 –0.2
5
2
1
3
1
0
Drain to Source Voltage V
V
PW = 5 µs, duty ≤ 1 %
Forward Transfer Admittance vs.
GS
–0.2
t f
= –10 V, V
–10
Switching Characteristics
Typical Capacitance vs.
Drain to Source Voltage
Drain Current I
Drain Current
Tc = –25°C
–0.5
–0.5
Drain Current
–20
t r
DD
Coss
Crss
Ciss
t d(off)
–1
–1
= –30 V
75°C
–30
–2
–2
I
D
D
V
Pulse Test
V
f = 1 MHz
25°C
DS
(A)
(A)
t d(on)
GS
–40
DS
= 10 V
–5
–5
= 0
(V)
–10
–50
–10