NTJD4401N ON Semiconductor, NTJD4401N Datasheet - Page 2

• Manufacturer Part Number: NTJD4401N
• Description: Small Signal Mosfet 20 V, Dual N-channel, Sc-88 Esd Protection
• Manufacturer: ON Semiconductor

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 3)
DRAIN−SOURCE DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Parameter
V
(T
V
V
(BR)DSS
Symbol
Q
V
GS(TH)
R
Q
td
J
(BR)DSS
td
C
C
GS(TH)
I
I
C
G(TOT)
Q
Q
DS(on)
V
= 25°C unless otherwise stated)
g
DSS
GSS
G(TH)
t
(OFF)
OSS
RSS
(ON)
RR
tr
FS
ISS
tf
SD
GS
GD
/T
/T
J
J
V
http://onsemi.com
GS
V
V
V
I
V
V
V
V
V
V
S
V
V
GS
GS
GS
NTJD4401N
I
GS
GS
GS
DS
GS
DS
D
=0.23 A
= 0 V, dI
GS
GS
= 0.5 A, R
= 0 V,
= 4.5 V, V
= 4.5 V, V
Test Condition
= 4.5 V, I
= 2.5 V, I
= 4.0 V, I
= 0 V, f = 1.0 MHz,
= 0 V, V
= V
= 0 V, I
= 0 V, V
V
I
I
D
S
DS
DS
2
= 0.63 A
= 0.63 A
S
, I
= 20 V
/dt = 100 A/ms,
D
GS
D
DS
D
D
D
DD
DS
G
= 250 mA
= 250 mA
= 0.63 A
= 0.40 A
= 0.63 A
= 20 W
= ±12 V
T
= 16 V
T
= 10 V,
= 10 V,
J
J
= 125°C
= 25°C
Min
0.6
20
0.083
0.227
0.786
0.506
0.410
0.92
−2.1
0.29
0.36
0.76
0.63
Typ
2.0
2.8
1.3
0.1
0.2
0.4
27
22
33
13
0.375
0.445
Max
1.0
1.5
5.0
3.0
1.1
10
46
22
mV/ °C
mV/ °C
Unit
mA
mA
pF
nC
ms
ms
W
V
V
S
V