UPA675T Renesas Electronics Corporation., UPA675T Datasheet

UPA675T

Manufacturer Part Number

UPA675T

Description

N-channel Mos Field Effect Transistor For High Speed Switching

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA675T.pdf (8 pages)

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Document No.

Date Published

Printed in Japan

ORDERING INFORMATION

Note Marking: SA

ABSOLUTE MAXIMUM RATINGS (T

Note PW

DESCRIPTION

can be driven by a voltage as low as 1.5 V and it is not

necessary to consider a drive current, this FET is ideal as an

actuator for low-current portable systems such as headphone

stereos and video cameras.

FEATURES

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC) (Tc = 25°C)

Drain Current (pulse)

Total Power Dissipation (T

Channel Temperature

Storage Temperature

The

Two MOS FET circuits in package the same size as SC-70

Automatic mounting supported

Gate can be driven by a 1.5 V power source

Because of its high input impedance, there’s no need to

consider a drive current

Since bias resistance can be omitted, the number of

components required can be reduced

PART NUMBER

PA675T

PA675T is an N-channel vertical MOS FET. Because it

G15454EJ1V0DS00 (1st edition)

May 2001 NS CP(K)

10 ms, Duty Cycle

Note

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Note

= 25°C)

= 0 V)

50%

FOR HIGH SPEED SWITCHING

SC-88 (SSP)

PACKAGE

= 25°C)

D(pulse)

D(DC)

GSS

DATA SHEET

DSS

stg

–55 to +150

±7.0

±0.1

±0.2

MOS FIELD EFFECT TRANSISTOR

150

0.2

°C

PACKAGE DRAWING (Unit: mm)

0.65

0.2

2.0 ±0.2

+0.1

-0

1.3

0.65

PIN CONNECTION

PA675T

0.15

0.9 ±0.1

+0.1

-0.05

Source 1

Gate 1

Drain 2

Source 2

Gate 2

Drain 1

0.7

0 to 0.1

(S1)

(G1)

(D2)

(S2)

(G2)

(D1)

2001

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UPA675T Summary of contents

Page 1

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The PA675T is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...

Page 3

TYPICAL CHARACTERISTICS (T A TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 300 250 200 150 100 Ambient Temperature - ˚C C FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 500 200 ...

Page 4

DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Gate to Source Voltage - V GS DRAIN TO SOURCE ON-STATE RESISTANCE vs. ...

Page 5

Data Sheet G15454EJ1V0DS PA675T 5 ...

Page 6

Data Sheet G15454EJ1V0DS PA675T ...

Page 7

Data Sheet G15454EJ1V0DS PA675T 7 ...

Page 8

The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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