NTLJF1103P ON Semiconductor, NTLJF1103P Datasheet - Page 2

• Manufacturer Part Number: NTLJF1103P
• Description: Power Mosfet And Schottky Diode
• Manufacturer: ON Semiconductor

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
3. Surface Mounted on FR4 Board using 2 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size.
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
SCHOTTKY DIODE MAXIMUM RATINGS
THERMAL RESISTANCE RATINGS
MOSFET ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 5)
CHARGES, CAPACITANCES AND GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 6)
DRAIN−SOURCE DIODE CHARACTERISTICS
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – t ≤ 5 s (Note 3)
Junction−to−Ambient – Steady State Min Pad (Note 4)
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Gate Threshold
Drain−to−Source On−Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Temperature Coefficient
Temperature Coefficient
Parameter
Parameter
Parameter
V
V
V
(BR)DSS
Symbol
V
Q
GS(TH)
R
Q
t
(BR)DSS
C
t
C
d(OFF)
GS(TH)
I
C
G(TOT)
Q
I
DS(on)
Q
d(ON)
V
g
DSS
GSS
G(TH)
t
OSS
RSS
RR
FS
ISS
t
t
GS
GD
SD
r
f
(T
/T
/T
J
J
J
= 25°C unless otherwise noted)
(T
J
= 25°C unless otherwise noted)
V
V
V
http://onsemi.com
GS
DS
GS
V
NTLJF1103P
V
GS
= −4.5 V, V
= −6 V, V
GS
= 0 V, IS = −1.9 A
V
I
V
D
V
V
= 0 V, f = 1 MHz, V
V
V
GS
V
V
V
GS
I
GS
DS
= 0 V, d
= −250 mA, Ref to 25°C
GS
GS
DS
D
GS
GS
= −4.5 V, V
Test Conditions
= −2.0 A, R
2
= V
= 0 V, V
= 0 V, I
= −4.5, I
= −2.5, I
= −6 V, I
= 1.8, I
= 1.5, I
I
S
GS
DS
DS
ISD
= −1.9 A
, I
= 0 V
D
= −5 V, I
D
/d
GS
D
D
D
D
D
= −250 mA
= −250 mA
t
= −3.0 A
= −3.0 A
DD
= −4.0 A
= −3.5 A
= −1.0 A
G
= 100 A/ms,
= ±5.0 V
= 2 W
= −8 V,
DS
D
T
T
T
J
= −8 V
= −2.5 A
J
J
= 125°C
= 25°C
= 25°C
Symbol
Symbol
V
R
R
R
RRM
V
I
qJA
qJA
qJA
F
R
−0.4
Min
−8
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Typ
Value
1.5
1.8
Max
4
177
2.0
20
20
83
54
±100
Max
TBD
−1.0
−1.2
120
150
170
−1
90
°C/W
Unit
Unit
V
V
A
mV/°C
mV/°C
Unit
mW
nA
nC
mA
pF
ns
ns
V
V
S
V