BTS3046SDR Infineon Technologies Corporation, BTS3046SDR Datasheet - Page 8
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BTS3046SDR
Manufacturer Part Number
BTS3046SDR
Description
46 Mohm Single Channel Smart Low Side Power Switch For 12v & 24v Application
Manufacturer
Infineon Technologies Corporation
Datasheet
1.BTS3046SDR.pdf
(22 pages)
Pos.
4.2.3
4.2.4
Note: Within the functional range the IC operates as described in the circuit description. The electrical
4.3
Note: This thermal data was generated in accordance with JEDEC JESD51 standards.
Pos.
4.3.5
4.3.6
4.3.7
1) Not subject to production test, specified by design
2) Specified
3) Specified
4) Specified
Datasheet
T
The product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers
(2 x 70 μm Cu, 2 x 35 μm Cu).
The product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with additional heatspreading copper area
of 600mm
a
characteristics are specified within the conditions given in the related electrical characteristics table.
For more information, go to www.jedec.org.
= 25 °C. Device is loaded with 1W power.
Parameter
Input pin current consumption
Input pin feedback current
Parameter
Junction to Case
Junction to Ambient (2s2p)
Junction to Ambient
(1s0p+600mm
R
R
R
2
Thermal Resistance
thJC
and 70 μm thickness.
thJA
thJA
value is simulated at natural convection on a cold plate setup (all pins are fixed to ambient temperature).
value is according to Jedec JESD51-2,-7 at natural convection on FR4 2s2p board;
value is according to Jedec JESD51-2,-3 at natural convection on FR4 1s0p board;
2
Cu)
T
a
T
= 25 °C, Device is loaded with 1W power.
a
= 25 °C, Device is loaded with 1W power.
Symbol
I
I
Symbol
R
R
R
IN(ON)
IN(lim)
thJC
thJA(2s2p)
thJA(1s0p)
8
Min.
–
–
Min.
–
–
–
Limit Values
Limit Values
Typ.
–
27
47
Max.
30
400
Max.
0.9
–
–
Smart low side power switch
General Product Characteristics
HITFET - BTS3046SDR
Unit
µA
µA
Unit
K/W
K/W
K/W
Rev. 1.0, 2009-12-06
Conditions
normal operation
fault indication
Conditions
1) 2)
1) 3)
1) 4)