BTS3104SDR Infineon Technologies Corporation, BTS3104SDR Datasheet
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BTS3104SDR
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BTS3104SDR Summary of contents
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Smart Low Side Power Switch 104 mOhm single channel smart low side power switch for 12V & ...
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... Input and Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5.1 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5.1.1 Failure Feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.2 Power stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.2.1 Output On-state Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.2.2 Output Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5.3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6.1 Thermal Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6.2 Overvoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6.3 Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6.4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 7 Package Outlines BTS3104SDR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Datasheet HITFET - BTS3104SDR Smart low side power switch 2 Rev. 1.0, 2009-12-06 ...
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... The BTS3104SDR is a single channel low-side MOSFET power switch in PG-TO252-3-11 package providing embedded protective functions. The device is monolithically integrated with a N channel vertical power FET and embedded protection functions. The BTS3104SDR is automotive qualified and can be used in 12V and 24V automotive and industrial applications. Table 1 Product Summary ...
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... The temperature information is given by a temperature sensor in the power MOSFET. During thermal shutdown the device sinks an increased input current at the IN pin to feedback the fault condition. The BTS3104SDR has a thermal-restart function. The device will turn on again, if input is still high, after the measured temperature has dropped below the thermal hysteresis. ...
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... V IN GND Figure 2 Naming of electrical parameters Datasheet Over- Over- voltage temperature Protection Protection Over- current limitation Source I Sourc e 5 HITFET - BTS3104SDR Smart low side power switch Block Diagram Drain Source BlockDiagram.emf V bat Drain V D Terms.emf Rev. 1.0, 2009-12-06 ...
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... Pin Definitions and Functions Pin Symbol Function 1 IN Input and fault feedback 2,4 Drain Load connection for power DMOS 3 Source Ground, Source of power DMOS Datasheet Smart low side power switch (top view ) 4 (Tab) Drain HITFET - BTS3104SDR Pin Configuration Rev. 1.0, 2009-12-06 ...
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... J +150 °C T -55 STG - ESD Symbol Limit Values Min. Max 2 HITFET - BTS3104SDR General Product Characteristics Test Conditions 200mOhm 5µ -0.2 V < < < -0.2 V ...
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... R – thJA(2s2p) R – thJA(1s0p °C, Device is loaded with 1W power °C, Device is loaded with 1W power HITFET - BTS3104SDR Smart low side power switch General Product Characteristics Unit Conditions Max. 30 µA normal operation 300 µA fault indication Unit Conditions Typ. ...
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... The product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm³ board with 2 inner copper layers ( μm Cu μm Cu). Device is dissipating 1 W power. . Datasheet 0,01 0 HITFET - BTS3104SDR Smart low side power switch General Product Characteristics 10 100 1000 10000 Zth_3104.emf Rev. 1.0, 2009-12-06 ...
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... Input Circuit Figure 5 shows the input circuit of the BTS3104SDR. The Zener Diode Z pulses. The internal circuitry is powered via the input pin. During normal operation the Input is connected to the Gate of the power MOSFET. During fault condition the device sinks the current back to the driving circuit. The current handling capability of the driving circuit does not influence the device ...
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... Figure 7 Typical Transfer Characteristic 5.1.1 Failure Feedback During failure condition the BTS3104SDR sinks the increased current 5.2 Power stage 5.2.1 Output On-state Resistance The on-state resistance depends on the junction temperature Figures show this dependencies for the typical on-state resistance R Temperature dependency of DS(on) ...
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... Figure 10 Typical On-State Resistance, Datasheet typ ° DS(on typ ° DS(on HITFET - BTS3104SDR Smart low side power switch Input and Power Stage 100 125 150 rdson_5V_3104.emf 100 125 150 rdson_3V_3104.emf Rev. 1.0, 2009-12-06 ...
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... IN [V] 10 load [ / Figure 11 Definition of Power Output Timing for Resistive Load Datasheet HITFET - BTS3104SDR Smart low side power switch t off off 13 Input and Power Stage Switching .emf Rev. 1.0, 2009-12-06 ...
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... Supply current from Input Pin 5.3.2 Input current protection mode 5.3.3 Input threshold voltage Power Stage 5.3.4 On-State Resistance 5.3.5 Nominal load current 5.3.6 Zero input voltage drain current Datasheet HITFET - BTS3104SDR Smart low side power switch Symbol Limit Values Unit Test Conditions Min. Typ. Max. I μA – ...
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... – 0.7 ds off 0.7 V – -1.0 D,inverted R R and . thJA DS(on) 15 HITFET - BTS3104SDR Input and Power Stage Unit Test Conditions μs =4.7 Ω 100 =13.5V -40 ° ° 150 °C 120 J μs 1) =10 Ω 120 =28V μs ...
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... The device is protected against over temperature due to overload and / or bad cooling conditions. To ensure this a temperature sensor located in the Power MOSFET is used. The BTS3104SDR has a thermal-restart function. The device will turn on again, if input is still high, after the measured temperature has dropped below the thermal hysteresis. ...
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... Overvoltage Protection When switching off inductive loads with low-side switches, the Drain-Source voltage potential, because the inductance intends to continue driving the current. Figure 13 Output Clamp The BTS3104SDR is equipped with a voltage clamp mechanism that prevents the Drain-Source voltage to rise V above . See Figure 13 ...
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... The time from the beginning of current limitation until the over temperature switch off depends strongly on the cooling conditions. The device sinks higher current on IN pin during the protective switch off and switches back ON after the BTS3104SDR cools down below the temperature hysteresis . Figure 16 shows this behavior. ...
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... 8 36V bat Symbol Limit Values Min. T 150 JSD Δ T – JSD V 60 D(Clamp D(lim) 19 HITFET - BTS3104SDR Smart low side power switch Protection Functions Short _circuit.emf Unit Test Conditions Typ. Max. 1) °C 175 – – – – ...
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... Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). For further information on alternative packages, please visit our website: http://www.infineon.com/packages. Datasheet +0.15 6.5 -0.05 A 5.4 ±0.1 (5) 3x 0.75 ±0.1 2.28 0. All metal surfaces tin plated, except area of cut. 20 HITFET - BTS3104SDR Smart low side power switch Package Outlines BTS3104SDR +0.05 2.3 -0.10 +0.08 B 0.5 -0.04 +0.20 0.9 -0.01 0...0.15 +0.08 0.5 -0.04 0.1 B GPT09277 Dimensions in mm Rev. 1.0, 2009-12-06 ...
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... Revision History Version Date Changes Rev. 1.0 2009-12-06 initial released data sheet Datasheet HITFET - BTS3104SDR Smart low side power switch 21 Revision History Rev. 1.0, 2009-12-06 ...
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Edition 2009-12-06 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG © All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With ...