US5U2 ROHM Co. Ltd., US5U2 Datasheet - Page 2

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US5U2

Manufacturer Part Number
US5U2
Description
4v Drive Nch Sbd Mosfet
Manufacturer
ROHM Co. Ltd.
Datasheet

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Transistors
∗1 60Hz 1cycle
∗2 Mounted on ceramic board
∗1 Mounted on a ceramic board
∗Pulsed
<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
<MOSFET and Di>
Total power dissipation
Range of storage temperature
Forward current surge peak
Power dissipation
Junction temperature
<MOSFET>
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
<Body diode characteristics (source-drain)>
Forward voltage
<Di>
Forward voltage
Reverse current
Electrical characteristics (Ta=25°C)
Parameter
Parameter
Parameter
charge
charge
Parameter
Parameter
V
Symbol
Symbol
Symbol
R
V
(BR) DSS
t
t
I
C
V
I
DS (on)
C
C
Q
GS (th)
d (on)
d (off)
Q
GSS
Y
Q
V
DSS
I
t
t
oss
SD
R
iss
rss
r
f
gs
gd
fs
F
g
Min.
Min.
Min.
1.0
1.0
30
Symbol
Symbol
Tstg
V
I
V
FSM
P
P
Tj
I
RM
F
Typ.
Typ.
R
D
D
Typ.
170
250
270
1.4
0.6
0.3
70
15
12
13
6
6
8
∗1
∗2
∗1
Max.
Max.
Max.
0.36
0.47
100
240
350
380
1.2
2.5
2.0
−55 to +150
10
1
Limits
Limits
150
0.5
2.0
0.5
1.0
30
20
Unit
Unit
Unit
mΩ
mΩ
mΩ
µA
µA
µA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
V
V
V
S
I
I
I
V
V
I
V
V
I
I
I
V
V
V
f=1MHz
V
I
V
R
R
V
I
R
S
F
F
D
D
D
D
D
D
R
= 0.6A, V
= 0.1A
GS
DS
DS
DS
DS
GS
DD
GS
DD
= 1mA, V
= 1.4A, V
= 1.4A, V
= 1.4A, V
= 0.7A
L
G
= 1.4A
L
0.5A
W / ELEMENT
= 21Ω
= 11Ω, R
= 20V
=10Ω
=20V, V
= 30V, V
= 10V, I
= 10V, I
= 10V
=0V
= 10V
W / TOTAL
15V, V
15 V
Unit
Unit
°C
°C
V
V
A
A
Conditions
Conditions
Conditions
GS
GS
GS
GS
GS
G
D
D
DS
GS
= 10Ω
= 1mA
= 1.4A
GS
=0V
=0V
= 10V
= 4.5V
= 4V
=0V
=0V
= 5V
Rev.B
US5U2
2/4

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