US5U29 ROHM Co. Ltd., US5U29 Datasheet
US5U29
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US5U29 Summary of contents
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... Transistor Small switching (–20V, –1.5A) US5U29 Features 1) The US5U29 conbines Pch MOSFET with a Schottky barrier diode in a single TUMT5 package. 2) Pch MOSFET have a low on-state resistance with a fast switching. 3) Pch MOSFET is reacted a low voltage drive(2.5V) 4) The Independently connected Schottky barrier diode have a low forward voltate ...
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... I =− =15Ω L − 0.5 − =10Ω G Min. Typ. Max. Unit Conditions − − −1 =−0.4A Min. Typ. Max. Conditions Unit 0. =0.7A − − F 200 V =20V − − µA R US5U29 =0V DS =0V =0V GS =−1mA =−2.5V =−0.5A =0V Rev.A 2/4 ...
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... V =0V GS Ciss 100 Crss Coss 10 0.01 0 100 Drain−Source Voltage : −V [V] DS Fig.8 Typical Capactitance vs.Drain−Source Voltage US5U29 10000 V =−4V GS Pulsed 1000 Ta=125°C 75°C 25°C −25°C 100 0.01 0 Drain Current : −I [A] D Fig.3 Static Drain−Source On−State ( Ι ...
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... Ta=125 −25 C 100 10 1 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 Forward Voltage :V [V] F Fig.11 Forward Temperature Characteristics V GS 10% 50 d(on US5U29 100 125 0 0.01 −25 C 0.001 0.0001 Reverse Voltage : V [V] R Fig.12 Reverse Temperature Characteristics Pulse Width 50% 90% 10% 10% 90% 90 ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...