BS809 Vishay, BS809 Datasheet - Page 2

• Manufacturer Part Number: BS809
• Description: Dmos Transistors N-channel Neral Semiconductor
• Manufacturer: Vishay

Ratings at 25 ° C ambient temperature unless otherwise specified
Drain-Source Breakdown Voltage
at I
Gate-Body Leakage Current, Forward
at V
Gate-Body Leakage Current, Reverse
at V
Drain Cutoff Current
at V
Gate-Source Threshold Voltage
at V
Drain-Source ON Resistance
at V
Capacitances
at V
Input Capacitance
Output Capacitance
Feedback Capacitance
Switching Times
at V
Turn-On Time
Turn-Off Time
Thermal Resistance Junction to Substrate
Backside
Thermal Resistance Junction to Ambient Air
1)
Device on fiberglass substrate, see layout
.59 (15)
D
GSF
GSR
DS
GS
GS
DS
GS
= 100 A, V
= 400 V, V
= 25 V, V
= 10 V, V
.47 (12)
= V
= 5 V, I
= 20 V, V
= 20 V, V
DS
.03 (0.8)
0.2 (5)
, I
D
D
GS
= 100 mA
DS
GS
= 250 A
DS
GS
DS
= 0 V, f = 1 MHz
= 10 V, R
= 0 V
= 0 V
= 0 V
= 0 V
.30 (7.5)
.20 (5.1)
.06 (1.5)
.12 (3)
.04 (1)
D
= 100
.08 (2)
.04 (1)
.08 (2)
Dimensions in inches (millimeters)
ELECTRICAL CHARACTERISTICS
Layout for R
Thickness: Fiberglass 0.059 in (1.5 mm)
Symbol
V
I
V
R
C
C
C
t
t
R
R
Copper leads 0.012 in (0.3 mm)
BS809
I
I
GSSF
on
off
GSSR
DSS
(BR)DSS
GS(th)
DS(on)
thSB
thJA
iSS
OSS
rS
thJA
test
Min.
400
–
–
–
1
–
–
–
–
–
–
–
Typ.
430
–
–
–
1.5
18
80
20
10
10
50
–
Max.
–
100
100
500
2.5
22
–
–
–
–
–
320
450
1)
1)
Unit
V
nA
nA
nA
V
pF
pF
pF
ns
ns
K/W