BS828 Vishay, BS828 Datasheet - Page 2

• Manufacturer Part Number: BS828
• Description: Dmos Transistors N-channel Neral Semiconductor
• Manufacturer: Vishay

Ratings at 25 ° C ambient temperature unless otherwise specified
Drain-Source Breakdown Voltage
at I
Gate-Body Leakage Current
at V
Drain Cutoff Current
at V
at V
Gate-Source Threshold Voltage
at V
Drain-Source ON Resistance
at V
Thermal Resistance Junction to Substrate
Backside
Thermal Resistance Junction to Ambient Air
Capacitances
at V
Input Capacitance
Output Capacitance
Feedback Capacitance
Switching Times
at V
Turn-On Time
Turn-Off Time
1)
Device on fiberglass substrate, see layout
Layout for R
Thickness: Fiberglass 0.059 in (1.5 mm)
.59 (15)
D
GS
DS
DS
GS
GS
DS
GS
= 100 A, V
.47 (12)
= 15 V, V
= 130 V, V
= 70 V, V
= V
= 2.8 V, I
= 20 V, V
= 10 V, V
DS
.03 (0.8)
0.2 (5)
, I
Copper leads 0.012 in (0.3 mm)
D
D
GS
DS
GS
thJA
DS
GS
= 1 mA
GS
= 100 mA
= 0
= 0.2 V
= 0, f = 1 MHz
= 10 V, R
= 0
= 0
test
.30 (7.5)
.20 (5.1)
.06 (1.5)
.12 (3)
.04 (1)
D
= 100
.08 (2)
.04 (1)
.08 (2)
Dimensions in inches (millimeters)
ELECTRICAL CHARACTERISTICS
BS828
Symbol
V
I
I
I
V
R
R
R
C
C
C
t
t
GSS
DSS
DSX
on
off
GS(th)
(BR)DSS
DS(ON)
thSB
thJA
iss
oss
rss
Min.
240
–
–
–
–
–
–
–
–
–
–
–
–
Typ.
250
–
–
–
1.5
5.5
–
–
80
20
5
5
50
Max.
–
10
1
25
2.5
8
320
450
–
–
–
–
–
1)
1)
Unit
V
nA
V
K/W
K/W
pF
pF
pF
ns
ns
A
A