BS829 Vishay, BS829 Datasheet
BS829
Manufacturer Part Number
BS829
Description
Dmos Transistors P-channel Neral Semiconductor
Manufacturer
Vishay
Datasheet
1.BS829.pdf
(2 pages)
Ratings at 25 ° C ambient temperature unless otherwise specified
Inverse Diode
4/98
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage (pulsed)
Drain Current (continuous) at T
Power Dissipation at T
Junction Temperature
Storage Temperature Range
1)
Max. Forward Current (continuous)
at T
Forward Voltage Drop (typ.)
at V
Device on fiberglass substrate, see layout
amb
GS
.016 (0.4)
.037(0.95) .037(0.95)
= 0 V, I
= 25 °C
1
SOT-23
.016 (0.4)
.122 (3.1)
.118 (3.0)
Pin configuration
1 = Gate, 2 = Source, 3 = Drain
Dimensions in inches and (millimeters)
3
.016 (0.4)
F
= 350 mA, T
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
SB
Top View
= 50 ° C
j
= 25 °C
.102 (2.6)
.094 (2.4)
SB
= 50 ° C
DMOS Transistors (P-Channel)
BS829
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
Marking
S29
High input impedance
Low gate threshold voltage
Low drain-source ON resistance
High-speed switching
No minority carrier storage time
CMOS logic compatible input
No thermal runaway
No secondary breakdown
Symbol
–V
–V
V
– I
P
T
T
Symbol
I
V
F
j
S
GS
tot
F
D
DSS
DGS
MECHANICAL DATA
FEATURES
Value
400
400
±20
70
350
150
–65 to +150
Value
350
1.0
1)
V
V
V
mA
mW
°C
mA
V
Unit
°C
Unit
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BS829 Summary of contents
Page 1
... Forward Voltage Drop (typ 350 mA ° 4/98 BS829 DMOS Transistors (P-Channel) High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown Case: SOT-23 Plastic Package Weight: approx ...
Page 2
... Dimensions in inches (millimeters) .20 (5.1) Layout for R test thJA Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm) BS829 ELECTRICAL CHARACTERISTICS Symbol Min. –V 400 (BR)DSS –I – GSSF –I – GSSR –I – DSS –V ...