BS123 Vishay, BS123 Datasheet

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BS123

Manufacturer Part Number
BS123
Description
Dmos Transistors N-channel
Manufacturer
Vishay
Datasheet
Ratings at 25 ° C ambient temperature unless otherwise specified
4/98
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage (pulsed)
Drain Current (continuous) at T
Power Dissipation at T
Junction Temperature
Storage Temperature Range
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case (for TO-92).
Dimensions in inches and (millimeters)
max .
.022 (0.55)
D
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.181 (4.6)
TO-92
.098 (2.5)
amb
G
1)
= 25 °C, at T
S
amb
.142 (3.6)
1)
= 25 °C, at T
DMOS Transistors (N-Channel)
SB
2)
= 50 °C
SB
2)
BS123
= 50 °C
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
High input impedance
Low gate threshold voltage
Low drain-source ON resistance
High-speed switching
No minority carrier storage time
CMOS logic compatible input
No thermal runaway
No secondary breakdown
Symbol
V
V
V
I
P
T
T
D
GS
j
S
DSS
DGS
tot
MECHANICAL DATA
FEATURES
Value
60
60
±20
1.1
830
150
–65 to +150
1)
Unit
V
V
V
A
mW
°C
°C

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BS123 Summary of contents

Page 1

... T amb Junction Temperature Storage Temperature Range 1) Valid provided that leads are kept at ambient temperature at a distance from case (for TO-92). 4/98 BS123 DMOS Transistors (N-Channel) .142 (3.6) High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time ...

Page 2

... Valid provided that leads are kept at ambient temperature at a distance from case (for TO-92). Inverse Diode Max. Forward Current (continuous °C amb Forward Voltage Drop (typ 1 ° BS123 ELECTRICAL CHARACTERISTICS Symbol Min (BR)DSS I – GSSF I – GSSR I – ...

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