DMS2120LFWB Diodes, Inc., DMS2120LFWB Datasheet - Page 2

• Manufacturer Part Number: DMS2120LFWB
• Description: P-channel Enhancement Mode Mosfet With Integrated Sbr
• Manufacturer: Diodes, Inc.

Electrical Characteristics – P-CHANNEL MOSFET – Q1
Electrical Characteristics – SBR – D1
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Breakdown Voltage (Note 5)
Forward Voltage
Reverse Current (Note 5)
Notes:
DMS2120LFWB
Document number: DS31667 Rev. 4 - 2
SBR is a registered trademark of Diodes Incorporated.
10
5. Short duration pulse test used to minimize self-heating effect.
8
6
4
2
0
0
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
V
1
DS
GS
Characteristic
Characteristic
V
= -2.0V
GS
V
GS
V
= -2.5V
GS
= -4.5V
= -8.0V
2
V
GS
= -1.0V
3
V
V
GS
GS
Q1, P-CHANNEL MOSFET
= -1.5V
4
= -1.2V
@ T
5
www.diodes.com
A
Symbol
= 25ºC unless otherwise specified
V
Symbol
R
BV
V
(BR)R
V
DS (ON)
I
I
I
|Y
C
2 of 7
V
C
C
GS(th)
R
GSS
DSS
F
SD
oss
DSS
iss
rss
fs
|
Min
40
⎯
⎯
⎯
-0.45
Min
-20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
10
8
6
4
2
0
Typ
0.5
⎯
⎯
⎯
⎯
0.42
Typ
100
632
70
84
65
54
⎯
⎯
⎯
⎯
⎯
8
@T
V
A
Max
0.42
0.49
DS
±100
±800
= 25°C unless otherwise specified
Max
Fig. 2 Typical Transfer Characteristics
-1.3
120
150
-1.2
⎯
30
⎯
95
⎯
⎯
⎯
⎯
-V
-1
= -5V
GS
T = 125°C
, GATE SOURCE VOLTAGE (V)
A
T = 150°C
Unit
mΩ
μA
nA
Unit
pF
pF
pF
A
V
V
S
V
μA
1
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
GS
DS
GS
GS
DS
GS
GS
GS
DS
GS
DS
I
I
I
V
R
F
F
R
T = -55°C
= 0.5A
= 1.0A
= 1mA
A
= -20V, V
= V
= -5V, I
= -10V, V
= 0V, I
= ±8V, V
= ±12V, V
= -4.5V, I
= -2.5V, I
= -1.8V, I
= 0V, I
= 20V
T = 25°C
GS
A
T = 85°C
A
, I
Test Condition
1.5
DMS2120LFWB
D
S
Test Condition
D
D
= -250μA
= -1.0A
DS
D
D
D
= -2.8A
GS
GS
= -250μA
DS
= -2.8A
= -2.0A
= -1.0A
= 0V
= 0V
= 0V
= 0V
© Diodes Incorporated
April 2009
2