ZVP4525E6 Zetex Semiconductors plc., ZVP4525E6 Datasheet - Page 4

• Manufacturer Part Number: ZVP4525E6
• Description: P-channel Enhancement Mode Mosfet
• Manufacturer: Zetex Semiconductors plc.

ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZVP4525E6
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance (1)
Forward Transconductance (3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
SYMBOL MIN.
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
rr
4
-250
-0.8
80
amb
= 25°C unless otherwise stated).
TYP.
-285
-30
±1
-1.5
10
13
200
73
12.8
3.91
1.53
3.78
17.5
7.85
2.45
.22
.45
205
21
MAX. UNIT CONDITIONS.
-500
±100
-2.0
14
18
3.45
.31
.63
0.97
290
29
V
nA
nA
V
mS
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
I
V
I
V
V
V
V
f=1MHz
V
R
(refer to test circuit)
V
I
test circuit)
T
V
T
di/dt= 100A/ s
ISSUE 1 - MARCH 2001
D
V
D
D
j
j
DS
GS
GS
DS
DS
DD
G
DS
GS
=-1mA, V
=-1mA, V
=-200mA(refer to
=25°C, I
=25°C, I
GS
=50 , V
=-250V, V
=-10V,I
=-25 V, V
=-25V,V
=-10V, I
=-3.5V, I
=0V
=-30V, I
= 40V, V
S
F
GS
D
=-200mA,
=-200mA,
GS
DS
D
GS
=-0.15A
D
D
=-200mA
=-10V
GS
DS
=-200mA
=-100mA
= V
=0V
GS
=-10V,
=0V,
=0V
=0V
GS