FQT7P06 Fairchild Semiconductor, FQT7P06 Datasheet - Page 3

• Manufacturer Part Number: FQT7P06
• Description: 60v P-channel Mosfet
• Manufacturer: Fairchild Semiconductor

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
600
500
400
300
200
100
10
10
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-1
0
0
10
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs.
Top :
Bottom : - 4.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
- 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
V
GS
4
-V
V
DS
DS
8
, Drain-Source Voltage [V]
-I
, Drain-Source Voltage [V]
D
10
, Drain Current [A]
C
C
C
0
10
iss
V
oss
rss
0
GS
= - 20V
12
V
GS
= - 10V
16
C
C
C
 Notes :
iss
oss
rss
1. 250 s Pulse Test
2. T
10
= C
 Note : T
= C
= C
1
C
gs
gd
ds
= 25
+ C
10
+ C
 Notes :
1
20
gd
1. V
2. f = 1 MHz
gd
(C
J
= 25
GS
ds
= shorted)
= 0 V
24
10
10
10
10
12
10
8
6
4
2
0
-1
-1
0
0
0.0
2
0
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
0.2
25
Figure 2. Transfer Characteristics
150
0.4
1
Variation vs. Source Current
150
0.6
-V
-V
0.8
2
Q
and Temperature
SD
GS
25
G
4
, Total Gate Charge [nC]
, Source-Drain Voltage [V]
, Gate-Source Voltage [V]
1.0
-55
1.2
3
V
DS
V
1.4
DS
= -48V
= -30V
1.6
4
1.8
6
 Notes :
2.0
5
 Notes :
1. V
2. 250 s Pulse Test
1. V
2. 250 s Pulse Test
 Note : I
DS
2.2
GS
= -30V
= 0V
D
2.4
6
= -7.0 A
2.6
Rev. A, May 2001
2.8
7
8