FQT5N20 Fairchild Semiconductor, FQT5N20 Datasheet
FQT5N20
Related parts for FQT5N20
FQT5N20 Summary of contents
Page 1
... C = 70°C) C (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) = 25° Parameter May 2001 1 DS(on FQT5N20 Units 200 V 1.0 A 0 1.0 A 0.25 mJ 5.5 V/ns 2.5 W 0.02 W/°C -55 to +150 °C 300 °C Typ Max Units -- 50 °C/W Rev. A, May 2001 TM ...
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... V = 50V 4.5A, di/dt 300A DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 2% 5. Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° ...
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... Drain Current and Gate Voltage 350 300 C iss 250 C 200 oss 150 100 C rss Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation Notes : 1. 250 s Pulse Test 25 10V 20V ...
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... V , Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2001 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 Notes : 250 0.5 D 0.0 -100 100 150 200 o C] Figure 8 ...
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... Fairchild Semiconductor Corporation (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) Rev. A, May 2001 ...
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... G G 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2001 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT ...
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... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2001 Fairchild Semiconductor Corporation DUT DUT + + Driver Driver Same Type Same Type ...
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... Package Dimensions 3.00 2.30 TYP (0.95) 4.60 6.50 ©2001 Fairchild Semiconductor Corporation SOT-223 0.10 MAX1.80 0.70 0.10 (0.95) 0.25 0.25 0.20 +0.04 0.06 –0.02 +0.10 –0.05 Rev. A, May 2001 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...