SIR892DP Vishay, SIR892DP Datasheet - Page 3

• Manufacturer Part Number: SIR892DP
• Description: N-channel 25-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68639
S-83048-Rev. B, 22-Dec-08
0.0045
0.0040
0.0035
0.0030
0.0025
0.0020
70
56
42
28
14
10
0
8
6
4
2
0
On-Resistance vs. Drain Current and Gate Voltage
0.0
0.0
0
I
D
0.5
V
8.4
12
= 10 A
GS
V
DS
Output Characteristics
Q
= 10 thru 4 V
g
- Drain-to-Source Voltage (V)
V
I
V
- Total Gate Charge (nC)
V
D
GS
DS
GS
- Drain Current (A)
16.8
Gate Charge
1.0
24
= 4.5 V
= 5 V
= 10 V
V
DS
25.2
1.5
= 10 V
36
V
V
GS
DS
33.6
= 3 V
2.0
48
= 15 V
New Product
42.0
2.5
60
3500
2800
2100
1400
700
1.8
1.5
1.2
0.9
0.6
0
5
4
3
2
1
0
- 50
0.0
0
I
D
On-Resistance vs. Junction Temperature
C
rss
= 10 A
- 25
T
C
0.8
4
T
= 125 °C
V
V
C
DS
GS
T
Transfer Characteristics
0
C
= 25 °C
J
oss
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
25
Capacitance
1.6
8
C
50
iss
Vishay Siliconix
2.4
12
V
75
SiR892DP
GS
T
= 10 V
C
www.vishay.com
100
V
= - 55 °C
GS
3.2
16
= 4.5 V
125
150
4.0
20
3