SIR468DP Vishay, SIR468DP Datasheet - Page 4

• Manufacturer Part Number: SIR468DP
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

SiR468DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.4
- 0.7
- 1.0
- 0.1
0.01
100
0.5
0.2
0.1
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
T
V
J
SD
0
= 150 °C
- Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
J
25
- Temperature (°C)
0.6
50
75
0.8
Limited by R
0.01
100
I
0.1
10
T
D
100
J
1
T
= 250 µA
0.1
= - 50 °C
J
= 25 °C
I
1.0
D
Safe Operating Area, Junction-to-Ambient
* V
Single Pulse
T
= 1 mA
125
A
GS
DS(on)
= 25 °C
> minimum V
V
1.2
150
DS
*
- Drain-to-Source Voltage (V)
1
GS
at which R
BVDSS Limited
0.030
0.025
0.020
0.015
0.010
0.005
0.000
10
200
160
120
DS(on)
80
40
0
0
0 .
0
0
is specified
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
1
100 µs
10 ms
100 ms
1 s
10 s
100 s
DC
1 ms
2
V
0.01
100
GS
3
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
5
S-82287-Rev. B, 22-Sep-08
Document Number: 68824
6
T
T
J
J
7
= 125 °C
= 25 °C
1
8
9
10
1
0