SIR402DP Vishay, SIR402DP Datasheet - Page 3

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SIR402DP

Manufacturer Part Number
SIR402DP
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68683
S-81733-Rev. B, 04-Aug-08
0.010
0.008
0.006
0.004
0.002
70
60
50
40
30
20
10
10
0
8
6
4
2
0
On-Resistance vs. Drain Current and Gate Voltage
0.0
0
0
I
D
10
= 20 A
0.5
6
V
DS
V
Q
Output Characteristics
GS
20
g
- Drain-to-Source Voltage (V)
1.0
- Total Gate Charge (nC)
I
= 10 thru 4 V
D
Gate Charge
- Drain Current (A)
12
30
1.5
V
40
DS
18
V
= 15 V
V
2.0
GS
GS
V
DS
= 4.5 V
50
= 10 V
V
V
= 24 V
GS
GS
24
2.5
= 2 V
= 3 V
60
3.0
70
30
2100
1800
1500
1200
900
600
300
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0
- 50
0.0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
I
D
0.5
= 20 A
5
V
V
C
C
DS
V
T
GS
Transfer Characteristics
oss
0
iss
GS
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
1.0
10
= 10 V, 4.5 V
25
Capacitance
T
C
= 125 °C
1.5
15
50
Vishay Siliconix
T
C
T
75
SiR402DP
C
= 25 °C
2.0
20
= - 55 °C
www.vishay.com
100
2.5
25
125
150
3.0
30
3

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