SIR874DP Vishay, SIR874DP Datasheet
SIR874DP
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SIR874DP Summary of contents
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... Bottom View Ordering Information: SiR874DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy ...
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... SiR874DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
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... S09-0663-Rev. A, 20-Apr-09 8.0 6.4 4 3.2 1.6 0.0 1.5 2.0 2.5 1300 1040 780 520 = 10 V 260 1.8 1 1.0 0.8 0.6 14.8 18.5 SiR874DP Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss 0 0.0 2.4 4.8 7.2 9 Drain-to-Source Voltage (V) DS ...
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... SiR874DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.2 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.05 0. °C J 0.03 0.02 0.01 0.00 0.8 1.0 1 250 µ ...
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... T - Case Temperature (°C) C Current Derating* 2.20 1.76 1.32 0.88 0.44 0.00 100 125 150 0 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiR874DP Vishay Siliconix 150 100 125 150 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www.vishay.com 5 ...
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... SiR874DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...