SIR406DP Vishay, SIR406DP Datasheet - Page 4

• Manufacturer Part Number: SIR406DP
• Description: N-channel 25-v D-s Mosfet
• Manufacturer: Vishay

SiR406DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.1
- 0.4
- 0.7
- 1.0
0.01
100
0.5
0.2
0.1
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
T
0
J
- Source-to-Drain Voltage (V)
= 150 °C
0.4
T
Threshold Voltage
J
25
- Temperature (°C)
0.6
50
I
D
75
0.8
= 250 µA
T
0.01
100
J
0.1
100
10
= 25 °C
Limited by R
1
0.01
I
1.0
D
Safe Operating Area, Junction-to-Ambient
= 5 mA
125
* V
Single Pulse
T
A
GS
= 25 °C
> minimum V
1.2
DS(on)
150
V
0.1
DS
*
- Drain-to-Source Voltage (V)
GS
at which R
1
BVDSS Limited
0.030
0.024
0.018
0.012
0.006
0.000
DS(on)
250
200
150
100
50
0
0
10
0 .
0
0
is specified
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
10 ms
1 ms
100 ms
1 s
10 s
DC
2
V
0.01
100
GS
3
- Gate-to-Source Voltage (V)
4
Time (s)
T
T
0.1
J
J
5
S09-1095-Rev. A, 15-Jun-09
= 125 °C
= 25 °C
Document Number: 64982
6
7
1
I
D
8
= 15 A
9
10
1
0