MTD6N20E ON Semiconductor, MTD6N20E Datasheet - Page 6

• Manufacturer Part Number: MTD6N20E
• Description: Power Mosfet 6 Amps, 200 Volts
• Manufacturer: ON Semiconductor

100
1.0
0.1
10
0.01
0.1
0.1
1
1.0E−05
V
SINGLE PULSE
T
0.02
Figure 11. Maximum Rated Forward Biased
0.1
0.05
GS
C
0.2
D = 0.5
SINGLE PULSE
= 25°C
= 20 V
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1.0
0.01
Safe Operating Area
1.0E−04
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
10
LIMIT
Figure 14. Diode Reverse Recovery Waveform
I
S
100
1.0E−03
SAFE OPERATING AREA
t
p
Figure 13. Thermal Response
10 ms
100 ms
1 ms
10 ms
dc
http://onsemi.com
MTD6N20E
1000
di/dt
t
a
t, TIME (s)
6
1.0E−02
t
rr
t
b
I
S
0.25 I
60
50
40
30
20
10
0
P
25
(pk)
Figure 12. Maximum Avalanche Energy versus
S
DUTY CYCLE, D = t
t
1
T
t
2
J
, STARTING JUNCTION TEMPERATURE (°C)
50
Starting Junction Temperature
1.0E−01
TIME
1
/t
2
75
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
qJC
(t) = r(t) R
− T
1.0E+00
100
C
= P
qJC
(pk)
1
R
qJC
125
(t)
I
D
= 6 A
1.0E+01
150