MTD1P40E ON Semiconductor, MTD1P40E Datasheet
MTD1P40E
Related parts for MTD1P40E
MTD1P40E Summary of contents
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... Drain ORDERING INFORMATION Device Package MTD1P40E DPAK MTD1P40E1 DPAK MTD1P40ET4 DPAK Preferred devices are recommended choices for future use and best overall value. 1 Publication Order Number MARKING DIAGRAM YWW T 1P40E 2 3 Source Shipping 75 Units/Rail 75 Units/Rail 2500 Tape & Reel MTD1P40E/D ...
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... Junction to Ambient (Note 1.) − Junction to Ambient (Note 2.) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. When surface mounted to an FR4 board using 1 pad size. MTD1P40E Rating = http://onsemi.com 2 ...
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... Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Gate Charge SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage Reverse Recovery Time Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width 300 s, Duty Cycle MTD1P40E ( unless otherwise noted) J Symbol V (BR)DSS I DSS = ...
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... Figure 3. On−Resistance versus Drain Current and Temperature 1. 0 1.5 1.25 1 0.75 0.5 0.25 0 − 50 − JUNCTION TEMPERATURE ( C) J Figure 5. On−Resistance Variation with Temperature MTD1P40E 1.5 5 4 5.8 5 ...
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... GSP 1000 800 600 400 200 0 −10 MTD1P40E POWER MOSFET SWITCHING The capacitance (C a voltage corresponding to the off−state condition when calculating t on−state when calculating t At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring ...
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... In addition the total r f power averaged over a complete switching cycle must not exceed (T − T )/(R ). J(MAX Power MOSFET designated E−FET can be safely used in switching circuits with unclamped inductive loads. For MTD1P40E 100 600 1 500 V = 200 V DD ...
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... V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area 0.5 0.2 0.1 0.1 0.05 0.02 SINGLE PULSE 0.01 0.01 1.0E−05 1.0E−04 Figure 14. Diode Reverse Recovery Waveform MTD1P40E SAFE OPERATING AREA 100 100 1000 25 Figure 12. Maximum Avalanche Energy versus 1.0E− ...
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... DPAK device calculated as follows. D 100 Figure 15. Thermal Resistance versus Drain Pad MTD1P40E interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.165 0.118 4.191 3.0 0.100 2.54 ...
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... C. The soldering temperature and time shall not exceed 260 C for more than 10 seconds. MTD1P40E board, the power dissipation can be doubled using the same footprint. SOLDER STENCIL GUIDELINES ...
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... C 150 C 100 TIME ( MINUTES TOTAL) MTD1P40E TYPICAL SOLDER HEATING PROFILE The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile ...
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... 0.13 (0.005) M MTD1P40E PACKAGE DIMENSIONS DPAK CASE 369A−13 ISSUE AA SEATING −T− PLANE http://onsemi.com 11 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN ...
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... Email: ONlit−asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4−32−1 Nishi−Gotanda, Shinagawa−ku, Tokyo, Japan 141−0031 Phone: 81−3−5740−2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 12 MTD1P40E/D ...